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PDF UPA2716GR Data sheet ( Hoja de datos )
| Número de pieza | UPA2716GR | |
| Descripción | SWITCHING N- AND P-CHANNEL POWER MOS FET | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA2716GR
SWITCHING
P-CHANNEL POWER MOS FET
DESCRIPTION
The µ PA2716GR is P-Channel MOS Field Effect Transistor
designed for power management applications of notebook
computers and Li-ion battery protection circuit.
FEATURES
• Low on-state resistance
RDS(on)1 = 7.0 mΩ MAX. (VGS = –10 V, ID = –7.0 A)
RDS(on)2 = 11.3 mΩ MAX. (VGS = –4.5 V, ID = –7.0 A)
• Low Ciss: Ciss = 3000 pF TYP.
• Built-in gate protection diode
• Small and surface mount package (Power SOP8)
ORDERING INFORMATION
PART NUMBER
µ PA2716GR
PACKAGE
Power SOP8
PACKAGE DRAWING (Unit: mm)
85
1, 2, 3 : Source
4 : Gate
5, 6, 7, 8 : Drain
14
5.37 MAX.
6.0 ±0.3
4.4
1.27 0.78 MAX.
0.40
+0.10
–0.05
0.12 M
0.5 ±0.2
0.8
0.10
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V)
VDSS
–30
V
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
Drain Current (pulse) Note1
Total Power Dissipation Note2
Total Power Dissipation Note3
VGSS
ID(DC)
ID(pulse)
PT1
PT2
m20
m14
m140
2
2
V
A
A
W
W
Channel Temperature
Tch 150 °C
Storage Temperature
Single Avalanche Current Note4
Single Avalanche Energy Note4
Tstg –55 to + 150 °C
IAS –14
A
EAS 19.6 mJ
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Mounted on ceramic substrate of 1200 mm2 x 2.2 mm
3. Mounted on glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mm, PW = 10 sec
4. Starting Tch = 25°C, VDD = –15 V, RG = 25 Ω, L = 100 µH, VGS = –20 → 0 V
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G16827EJ2V0DS00 (2nd edition)
Date Published July 2004 NS CP(K)
Printed in Japan
The mark shows major revised points.
2004
1 page  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
20
ID = −7 A
Pulsed
15
VGS = −4 V
−4.5 V
10 −10 V
5
0
-50
0 50 100
Tch - Channel Temperature - °C
150
10000
SWITCHING CHARACTERISTICS
1000
td(off)
100
10
1
-0.1
tf
tr
td(on)
VDD = −15 V
VGS = −10 V
RG = 10 Ω
-1 -10
ID - Drain Current - A
-100
1000
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
100
10 VGS = −10 V
0V
1
0.1
0.01
0 0.2 0.4 0.6 0.8 1 1.2
VF(S-D) - Source to Drain Voltage - V
1.4
µ PA2716GR
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
1000
Ciss
Coss
Crss
100
10
-0.1
VGS = 0 V
f = 1 MHz
-1 -10 -100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
-30 -15
ID = −14 A
VDD = −24 V
-20 −15 V
−6 V
-10
-10
0
0
VDS
VGS
20 40 60 80
QG - Gate Charge - nC
-5
0
100
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
VGS = 0 V
di/dt = 50 A/µs
10
0.1 1
10
IF - Diode Forward Current - A
100
Data Sheet G16827EJ2V0DS
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet UPA2716GR.PDF ] | |
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