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PDF JANTX2N2906A Data sheet ( Hoja de datos )
| Número de pieza | JANTX2N2906A | |
| Descripción | PNP SMALL SIGNAL SILICON TRANSISTOR | |
| Fabricantes | Microsemi Corporation | |
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TECHNICAL DATA
PNP SMALL SIGNAL SILICON TRANSISTOR
Qualified per MIL-PRF-19500/291
Devices
2N2906A
2N2906AL
2N2906AUA
2N2906AUB
2N2907A
2N2907AL
2N2907AUA
2N2907AUB
Qualified Level
JAN
JANTX
JANTXV
JANS
MAXIMUM RATINGS
Ratings
Symbol
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ TA = +250C
@ TC = +250C
VCEO
VCBO
VEBO
IC
PT(1)
PT(2 / 3)
Operating & Storage Junction Temperature Range
TJ, Tstg
1) Derate linearly 2.28 mW/0C for TA > +250C.
2) Derate linearly 10.3 mW/0C for TC > +250C.
3) For UA and UB surface mount case outlines: PT = 1.16 W;
derate linearly 6.6mW/0C for TC > +250C.
All Types
60
60
5.0
600
0.4
1.8
-65 to +200
Unit
Vdc
Vdc
Vdc
mAdc
W
W
0C
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 10 mAdc
V(BR)CEO
Collector-Base Cutoff Current
VCE = 50 Vdc
ICBO
VCE = 60 Vdc
Collector-Base Cutoff Current
VCE = 50 Vdc
ICES
Emitter-Base Cutoff Current
VEB = 4.0 Vdc
IEBO
VEB = 5.0 Vdc
TO-18* (TO-206AA)
4 PIN*
2N2906AUA, 2N2907AUA
3 PIN*
2N2906AUB, 2N2907AUB
*See appendix A for package outline
Min. Max.
Unit
60 Vdc
µAdc
10
10
ηAdc
50 ηAdc
ηAdc
50
10
µAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| JANTX2N2906A | PNP SMALL SIGNAL SILICON TRANSISTOR | Microsemi Corporation |
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