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PDF IRFP460AS Data sheet ( Hoja de datos )
| Número de pieza | IRFP460AS | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
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PD-94011A
SMPS MOSFET IRFP460AS
Applications
l SMPS, UPS, Welding and High Speed
Power Switching
VDSS
Benefits
l Dynamic dv/dt Rating
500V
l Repetitive Avalanche Rated
l Isolated Central Mounting Hole
l Fast Switching
l Ease of Paralleling
l Simple Drive Requirements
l Solder plated and leadformed for surface mounting
Description
Third Generation HEXFET®s from International Rectifier provide the
designer with the best combination of fast switching, ruggedized
device design, low on-resistance and cost-effectiveness.
HEXFET® Power MOSFET
Rds(on) max ID
0.27Ω
20A
SMD-247
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use of TO-220
devices. The TO-247 is similar but superior to the earlier TO-218
package because of its isolated mounting hole. It also provides
greater creepage distance between pins to meet the requirements of
most safety specifications.
This plated and leadformed version of the TO-247 package allows
the package to be surface mounted in an application.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Mounting torqe, 6-32 or M3 screw
Max.
20
13
80
280
2.2
± 30
3.8
-55 to + 150
10 lbf•in (1.1N•m)
Maximum Reflow Temperature
230 (Time above 183 °C
should not exceed 100s)
Units
A
W
W/°C
V
V/ns
°C
°C
Typical SMPS Topologies:
l Full Bridge
l PFC Boost
Notes through
are on page 8
www.irf.com
1
01/17/01
1 page  
IRFP460AS
20
15
10
5
0
25 50 75 100 125 150
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.1 0.20
0.10
0.05
0.02
0.01 0.01
0.001
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
0.1
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
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| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRFP460AS.PDF ] | |
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