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IRFP440 fiches techniques PDF

Intersil Corporation - N-Channel Power MOSFET / Transistor

Numéro de référence IRFP440
Description N-Channel Power MOSFET / Transistor
Fabricant Intersil Corporation 
Logo Intersil Corporation 





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IRFP440 fiche technique
Data Sheet
IRFP440
July 1999 File Number 2089.3
8.8A, 500V, 0.850 Ohm, N-Channel Power
MOSFET
This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17425.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFP440
TO-247
IRFP440
NOTE: When ordering, include the entire part number.
Features
• 8.8A, 500V
• rDS(ON) = 0.850
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
4-347
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999

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