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PDF IRFP450 Data sheet ( Hoja de datos )

Número de pieza IRFP450
Descripción N-Channel Power MOSFET / Transistor
Fabricantes ST Microelectronics　
Logotipo ST Microelectronics Logotipo




1. IRFP450






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No Preview Available ! IRFP450 Hoja de datos, Descripción, Manual

® IRFP450
N - CHANNEL 500V - 0.33Ω - 14A - TO-247
PowerMESH™ MOSFET
TYPE
V DSS
RDS(on)
ID
IRFP450
500 V < 0.4 Ω
14 A
s TYPICAL RDS(on) = 0.33 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
This power MOSFET is designed using the
company’s consolidated strip layout-based MESH
OVERLAY™ process. This technology matches
and improves the performances compared with
standard parts from various sources.
APPLICATIONS
s HIGH CURRENT SWITCHING
s UNINTERRUPTIBLE POWER SUPPLY (UPS)
s DC/DC COVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT.
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR Drain- gate Voltage (RGS = 20 kΩ)
VGS Gat e-source Voltage
ID Drain Current (continuous) at Tc = 25 oC
ID Drain Current (continuous) at Tc = 100 oC
IDM ( •)
Ptot
Drain Current (pulsed)
Tot al Dissipation at Tc = 25 oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
Value
Uni t
500 V
500 V
± 20
V
14 A
8.7 A
56 A
190 W
1.5 W/oC
3.5
-65 to 150
150
(1) ISD ≤14 A, di/dt ≤ 130 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
V/ ns
oC
oC
August 1998
1/8

1 page




IRFP450 pdf
Normalized Gate Threshold Voltage vs
Temperature
IRFP450
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8

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