|
|
PDF K4S641632E Data sheet ( Hoja de datos )
| Número de pieza | K4S641632E | |
| Descripción | 64Mbit SDRAM | |
| Fabricantes | Samsung semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de K4S641632E (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
|
No Preview Available !
K4S641632E
CMOS SDRAM
64Mbit SDRAM
1M x 16Bit x 4 Banks
Synchronous DRAM
LVTTL
Revision 0.2
Sept. 2001
* Samsung Electronics reserves the right to change products or specification without notice.
Rev.0.2 Sept. 2001
1 page  
K4S641632E
CMOS SDRAM
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, TA = 0 to 70°C)
Parameter
Operating current
(One bank active)
Symbol
Test Condition
ICC1
Burst length = 1
tRC ≥ tRC(min)
IO = 0 mA
Version
Unit Note
- 50 - 55 -60 - 70 - 75 -1H -1L
160 150 140 115 110 100 100 mA 1
Precharge standby current ICC2P CKE ≤ VIL(max), tCC = 10ns
in power-down mode
ICC2PS CKE & CLK ≤ VIL(max), tCC = ∞
Precharge standby current
in non power-down mode
ICC2N
ICC2NS
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
1
1
15
6
mA
mA
Active standby current in
power-down mode
Active standby current in
non power-down mode
(One bank active)
ICC3P CKE ≤ VIL(max), tCC = 10ns
ICC3PS CKE & CLK ≤ VIL(max), tCC = ∞
ICC3N
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
ICC3NS
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
3
3
25
15
mA
mA
Operating current
(Burst mode)
Refresh current
Self refresh current
ICC4
ICC5
IO = 0 mA
Page burst
4Banks Activated
tCCD = 2CLKs
tRC ≥ tRC(min)
ICC6 CKE ≤ 0.2V
180 170 160 140 135 110 110 mA 1
180 170 160 140 135 125 125 mA 2
C 1 mA 3
L 400 uA 4
Notes : 1. Measured with outputs open.
2. Refresh period is 64ms.
3. K4S641632E-TC**
4. K4S641632E-TL**
5. Unless otherwise noted, input swing IeveI is CMOS(VIH/VIL=VDDQ/VSSQ)
Rev.0.2 Sept. 2001
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet K4S641632E.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| K4S641632C | 1M x 16Bit x 4 Banks Synchronous DRAM | Samsung semiconductor |
| K4S641632D | 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL | Samsung semiconductor |
| K4S641632E | 64Mbit SDRAM | Samsung semiconductor |
| K4S641632F | 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL | Samsung semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |