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PDF JANTX1N5554 Data sheet ( Hoja de datos )
| Número de pieza | JANTX1N5554 | |
| Descripción | (1N5550 / 1N5551 / 1N5552 / 1N5553 / 1N5554) | |
| Fabricantes | Microsemi | |
| Logotipo |  |
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The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 19 July 2004.
INCH-POUND
MIL-PRF-19500/420H
19 April 2004
SUPERSEDING
MIL-PRF-19500/420G
30 December 2002
PERFORMANCE SPECIFICATION SHEET
* SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER, RECTIFIER,
TYPES 1N5550 THROUGH 1N5554, 1N5550US THROUGH 1N5554US,
JAN, JANTX, JANTXV, JANS, JANHCA, JANHCB, JANHCC, JANHCD,
JANHCE, JANKCA, JANKCD, AND JANKCE
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
* The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
* 1.1 Scope. This specification covers the performance requirements for silicon, general purpose, semiconductor
diodes. Four levels of product assurance are provided for each encapsulated device type as specified in
MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.
1.2 Physical dimensions. See figure 1 (similar to DO-41) for 1N5550 through 1N5554, figure 2 for 1N5550US
through 1N5554US, and figures 3, 4, 5, 6, and 7 for JANHC and JANKC die.
1.3 Maximum ratings. Unless otherwise specified, TC = +25°C and ratings apply to all case outlines.
Col. 1
Col. 2 Col. 3
Col. 4
Col. 5
Col. 6
Col. 7
Type
V(BR)
VRWM
and
V(BR)min
IO1
TL = +55°C;
L = .375 inch
(1) (2) (3)
IFSM
IO = 2 A dc
tp = 1/120 s
TA = +55°C
TJ
IO2
TA =
+55°C
(2) (4)
Col. 8
TSTG
V dc
A dc
A(pk)
°C A dc
°C
1N5550, 1N5550US 200
200
5
100 -65 to +200
3
-65 to +175
1N5551, 1N5551US 400
400
5
100 -65 to +200
3
-65 to +175
1N5552, 1N5552US 600
600
5
100 -65 to +200
3
-65 to +175
1N5553, 1N5553US 800
800
5
100 -65 to +200
3
-65 to +175
1N5554, 1N5554US 1,000 1,000
5
100 -65 to +200
3
-65 to +175
(1) Derate linearly at 41.6 mA/°C above TL = +55°C at L = .375 inch (9.53 mm).
(2) An IO of up to 6 A dc is allowable provided that appropriate heat sinking or forced air cooling maintains the
maximum junction temperature at or below +200°C as proven by the junction temperature rise test (see 6.5).
Barometric pressure reduced:
1N5550, 1N5551, 1N5552 - 8 mmHg (100,000 feet).
1N5553, 1N5554
- 33 mmHg (70,000 feet).
(3) Does not apply to surface mount devices.
(4) Derate linearly at 25 mA/°C above TA = +55°C.
* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43216-5000, or emailed to
[email protected] . Since contact information can change, you may want to verify the currency of
this address information using the ASSIST Online database at http://www.dodssp.daps.mil.
AMSC N/A
FSC 5961
1 page  
MIL-PRF-19500/420H
Ltr Dimensions
Inches
Millimeters
Min Max Min Max
A .085 .091 2.16 2.31
B .072 .078 1.83 1.98
C .008 .014 0.20 0.36
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. The physical characteristics are:
Top (cathode) Au Thickness = 10,000Å minimum,
Back (anode) Au Thickness = 4,000Å minimum.
4. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
* FIGURE 3. JANHCA and JANKCA (A-version) die dimensions.
5
5 Page 
MIL-PRF-19500/420H
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified
herein.
4.2.1 Group E qualification. Group E qualification shall be performed herein for qualification or requalification
only. In case qualification was awarded to a prior revision of the specification sheet that did not request the
performance of table II tests, the tests specified in table II herein shall be performed on the first inspection lot to this
revision to maintain qualification.
4.2.2 JANHC and JANKC die. Qualification shall be in accordance with appendix G of MIL-PRF-19500 and as
specified herein.
* 4.3 Screening (JANS, , JANTXV and JANTX levels only). Screening shall be in accordance with table IV of
MIL-PRF-19500 (appendix E), and as specified herein. Specified electrical measurements shall be made in
accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable.
Screen (see
table IV of
JANS level
JANTXV and JANTX level
MIL-PRF-19500)
1a Required
Not required
1b Required
Required (JANTXV only)
2 Optional
Not required
3a Required
Required
3b Not applicable
Not applicable
(1) 3c
Thermal impedance (see 4.3.1 and 4.4.1) Thermal impedance (see 4.3.1 and 4.4.1)
4 Not applicable
Not applicable
5 Not applicable
Not applicable
6 Not applicable
Not applicable
7a Not applicable
Not applicable
7b Optional
Optional
8 Required
Not required
9 VF1 and IR1
10 Method 1038 of
MIL-STD-750, condition A
Not applicable
Method 1038 of
MIL-STD-750, condition A
11 VF1 and IR1; ∆Vf1 ≤ ±0.1 V dc
VF1 and IR1
∆IR1 ±250 nA dc or 100 percent of initial
value whichever is greater.
12 Required, see 4.3.2
Required, see 4.3.2
(2) 13
Subgroups 2 and 3 of table I herein;
∆IR1 ≤ 100 percent of initial reading or 250
nA dc, whichever is greater.
∆VF1 ≤ ±.1 V dc change from initial value.
Scope display evaluation (see 4.5.3)
Subgroup 2 of table I herein;
∆IR1 ≤ 100 percent of initial reading or 250 nA
dc, whichever is greater.
∆VF1 ≤ ±.1 V dc change from initial value.
Scope display evaluation (see 4.5.3)
14a Not applicable
Not applicable
(3) 14b
Required
Required
15 Required
Not required
16 Required
Not required
(1) Thermal impedance shall be performed any time after sealing provided temperature cycling is performed in
accordance with MIL-PRF-19500, screen 3 prior to this thermal test.
(2) ZθJX is not required in screen 13, if already previously performed.
(3) For clear glass diodes, the hermetic seal (gross leak) may be performed at any time after
temperature cycling.
11
11 Page | ||
| Páginas | Total 28 Páginas | |
| PDF Descargar | [ Datasheet JANTX1N5554.PDF ] | |
Hoja de datos destacado
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