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PDF 50N02-09 Data sheet ( Hoja de datos )
| Número de pieza | 50N02-09 | |
| Descripción | SUB50N02-09 | |
| Fabricantes | Vishay Siliconix | |
| Logotipo |  |
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SUD50N02-09P
Vishay Siliconix
N-Channel 20-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
VDS (V)
20
rDS(on) (W)
0.0095 @ VGS = 10 V
0.017 @ VGS = 4.5 V
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TO-252
ID (A)a
20
15
FEATURES
D TrenchFETr Power MOSFET
D 175_C Junction Temperature
D PWM Optimized for High Efficiency
D 100% Rg Tested
APPLICATIONS
D High-Side Synchronous Buck DC/DC
Conversion
D − Desktop
− Server
GDS
Top View
Drain Connected to Tab
Ordering Information: SUD50N02-09P
SUD50N02-09P—E3 (Lead Free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currenta
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TA = 25_C
TC= 100_C
L = 0.1 mH
TA = 25_C
TC = 25_C
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
20
"20
20
14
100
4.3
29
42
6.5a
39.5
−55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Case
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
b. Limited by package
Document Number: 72034
S-41168—Rev. C, 14-Jun-04
t v 10 sec
Steady State
Symbol
RthJA
RthJC
Typical
19
40
3.1
Maximum
23
50
3.8
Unit
_C/W
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1
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| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 50N02-09.PDF ] | |
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| 50N02-09 | SUB50N02-09 | Vishay Siliconix |
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