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ROHM Semiconductor - Schottky Barrier Diode

Numéro de référence RB531XN
Description Schottky Barrier Diode
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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RB531XN fiche technique
Diodes
Schottky barrier diode
RB531XN
RB531XN
!Applications
Rectifying small power
!Features
1) Small mold type. (UMD6)
2) High reliability.
!Construction
Silicon epitaxial planar
!External dimensions (Unit : mm)
2.0±0.2
1.3±0.1
0.65 0.65
(3) (2) (1)
(4) (5) (6)
0.2
+0.1
0.05
ROHM : UMD6
EIAJ : SOT-363
JEDEC :
0.9±0.1
0.7
0.1Min.
00.1
KKK
(3) (2) (1)
0.15±0.05
(4) (5) (6)
AAA
!Absolute maximum ratings (Ta=25°C)
Parameter
DC reverse voltage
Mean rectifying current 1
Peak forward surge curren 2
Junction temperature
Storage temperature
1 Rating of per diode.
2 60Hz for 1
Symbol
VR
IO
IFSM
Tj
Tstg
Limits
30
100
1
125
40 to +125
Unit
V
mA
A
°C
°C
!Electrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Forward voltage
VF1 − − 0.300 V IF=10mA
VF2 − − 0.430 V IF=100mA
Reverse current
IR − − 20 µA VR=10V
Note) Please pay attention to static electricity when handling.
Conditions
1/2

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