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Numéro de référence | RB531XN | ||
Description | Schottky Barrier Diode | ||
Fabricant | ROHM Semiconductor | ||
Logo | |||
1 Page
Diodes
Schottky barrier diode
RB531XN
RB531XN
!Applications
Rectifying small power
!Features
1) Small mold type. (UMD6)
2) High reliability.
!Construction
Silicon epitaxial planar
!External dimensions (Unit : mm)
2.0±0.2
1.3±0.1
0.65 0.65
(3) (2) (1)
(4) (5) (6)
0.2
+0.1
−0.05
ROHM : UMD6
EIAJ : SOT-363
JEDEC :
0.9±0.1
0.7
0.1Min.
0∼0.1
KKK
(3) (2) (1)
0.15±0.05
(4) (5) (6)
AAA
!Absolute maximum ratings (Ta=25°C)
Parameter
DC reverse voltage
Mean rectifying current ∗1
Peak forward surge curren ∗2
Junction temperature
Storage temperature
∗1 Rating of per diode.
∗2 60Hz for 1
Symbol
VR
IO
IFSM
Tj
Tstg
Limits
30
100
1
125
−40 to +125
Unit
V
mA
A
°C
°C
!Electrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Forward voltage
VF1 − − 0.300 V IF=10mA
VF2 − − 0.430 V IF=100mA
Reverse current
IR − − 20 µA VR=10V
Note) Please pay attention to static electricity when handling.
Conditions
1/2
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Pages | Pages 2 | ||
Télécharger | [ RB531XN ] |
No | Description détaillée | Fabricant |
RB531XN | Schottky Barrier Diode | ROHM Semiconductor |
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