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Dallas Semiconducotr - 2048k Nonvolatile SRAM

Numéro de référence DS1249Y
Description 2048k Nonvolatile SRAM
Fabricant Dallas Semiconducotr 
Logo Dallas Semiconducotr 





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DS1249Y fiche technique
www.maxim-ic.com
DS1249Y/AB
2048k Nonvolatile SRAM
FEATURES
10 years minimum data retention in the
absence of external power
Data is automatically protected during power
loss
Unlimited write cycles
Low-power CMOS operation
Read and write access times as fast as 70 ns
Lithium energy source is electrically
disconnected to retain freshness until power is
applied for the first time
Full ±=10% VCC operating range (DS1249Y)
Optional ±=5% VCC operating range
(DS1249AB)
Optional industrial temperature range of
-40°C to +85°C, designated IND
JEDEC standard 32-pin DIP package
PIN ASSIGNMENT
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32 VCC
31 A15
30 A17
29 WE
28 A13
27 A8
26 A9
25 A11
24 OE
23 A10
22 CE
21 DQ7
20 DQ6
19 DQ5
18 DQ4
17 DQ3
32-Pin ENCAPSULATED PACKAGE
740-mil EXTENDED
PIN DESCRIPTION
A0 - A17
- Address Inputs
DQ0 - DQ7
- Data In/Data Out
CE - Chip Enable
WE - Write Enable
OE - Output Enable
VCC
GND
- Power (+5V)
- Ground
NC - No Connect
DESCRIPTION
The DS1249 2048k Nonvolatile SRAMs are 2,097,152-bit, fully static, nonvolatile SRAMs organized as
262,144 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry
which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the
lithium energy source is automatically switched on and write protection is unconditionally enabled to
prevent data corruption. There is no limit on the number of write cycles which can be executed and no
additional support circuitry is required for microprocessor interfacing.
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