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PDF FZ1200R17KF6CB2 Data sheet ( Hoja de datos )
| Número de pieza | FZ1200R17KF6CB2 | |
| Descripción | IGBT Power Module | |
| Fabricantes | Eupec | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de FZ1200R17KF6CB2 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ 1200 R 17 KF6C B2
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Tvj = 25°C
Kollektor-Dauergleichstrom
DC-collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
TC = 80 °C
TC = 25 °C
tP = 1 ms, TC = 80°C
vorläufige Daten
preliminary data
VCES
IC,nom.
IC
ICRM
1700
1200
1950
2400
V
A
A
A
Gesamt-Verlustleistung
total power dissipation
TC=25°C, Transistor
Ptot 9,6 kW
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
VGES
+/- 20V
V
Dauergleichstrom
DC forward current
IF
1200
A
Periodischer Spitzenstrom
repetitive peak forw. current
Grenzlastintegral der Diode
I2t - value, Diode
Isolations-Prüfspannung
insulation test voltage
tp = 1 ms
VR = 0V, tp = 10ms, TVj = 125°C
RMS, f = 50 Hz, t = 1 min.
IFRM
I2t
VISOL
2400
380
4
A
kA2s
kV
Charakteristische Werte / Characteristic values
Transistor / Transistor
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
Gate-Schwellenspannung
gate threshold voltage
IC = 1200A, V GE = 15V, Tvj = 25°C
IC = 1200A, V GE = 15V, Tvj = 125°C
IC = 80mA, VCE = VGE, Tvj = 25°C
Gateladung
gate charge
VGE = -15V ... +15V
Eingangskapazität
input capacitance
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V
Rückwirkungskapazität
reverse transfer capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V
VCE = 1700V, V GE = 0V, Tvj = 25°C
Gate-Emitter Reststrom
gate-emitter leakage current
VCE = 0V, VGE = 20V, Tvj = 25°C
prepared by: A. Wiesenthal
approved by: Christoph Lübke; 12.04.2001
date of publication: 05.04.2001
revision: 1 (preliminary)
VCE sat
min.
typ.
2,6
3,1
max.
3,1
3,6
V
V
VGE(th)
4,5
5,5
6,5
V
QG
14,5
µC
Cies 79 nF
Cres
ICES
4 nF
5 mA
IGES 400 nA
1(8)
FZ1200R17KF6CB2_V.xls
1 page  
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ 1200 R 17 KF6C B2
Übertragungscharakteristik (typisch)
Transfer characteristic (typical)
IC = f (VGE)
VCE = 20V
vorläufige Daten
preliminary data
2400
2200
2000
1800
Tj = 25°C
Tj = 125°C
1600
1400
1200
1000
800
600
400
200
0
5 6 7 8 9 10 11 12 13
VGE [V]
Durchlaßkennlinie der Inversdiode (typisch)
Forward characteristic of inverse diode (typical)
2400
2200
2000
1800
1600
1400
1200
1000
800
600
400
200
0
0,0
Tvj = 25°C
Tvj = 125°C
0,5 1,0 1,5
2,0
VF [V]
IF = f (VF)
2,5 3,0
5(8)
FZ1200R17KF6CB2_V.xls
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FZ1200R17KF6CB2.PDF ] | |
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