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PDF IRG4BC20UD Data sheet ( Hoja de datos )
| Número de pieza | IRG4BC20UD | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | IRF | |
| Logotipo |  |
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PD-91449C
IRG4BC20UD
INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBT
ULTRAFAST SOFT RECOVERY DIODE
Features
C
• UltraFast: Optimized for high operating frequencies
8-40 kHz in hard switching, >200kHz in resonant
mode
• Generation 4 IGBT design provides tighter para-
meter distribution and higher efficiency than
Generation 3
• IGBT co-packaged with HEXFREDTM ultrafast, ultra-
soft-recovery anti-parallel diodes for use in bridge
configurations
• Industry standard TO-220AB package
G
E
N-Channel
VCES = 600V
VCE(on) typ. = 1.85V
@VGE = 15V, IC = 6.5A
Benefits
• Generation 4 IGBTs offers the highest efficiencies
available
• Optimized for specific application conditions
• HEXFRED diodes optimized for performance with
IGBTs . Minimized recovery characteristics require
less/no snubbing
• Designed to be a "drop-in" replacement for
equivalent industry-standard Generation 3 IR IGBTs
TO-220AB
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
Wt
www.irf.com
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Max.
600
13
6.5
52
52
7.0
52
± 20
60
24
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Units
V
A
V
W
°C
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.50
–––
2 (0.07)
Max.
2.1
3.5
–––
80
–––
Units
°C/W
g (oz)
1
6/16/03
1 page  
1000
VGE = 0V,
f = 1MHz
Cies = Cge + C gc , Cce SHORTED
Cres = C gc
800 Coes = C ce + C gc
Cies
600
Coes
400
Cres
200
0A
1 10 100
VCE, Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
IRG4BC20UD
20
VCE = 400V
IC = 6.5A
16
12
8
4
0A
0 5 10 15 20 25 30
Qg , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
0.32
VCC = 480V
VGE = 15V
TJ = 25°C
I C = 6.5A
0.31
0.30
0.29
0
10 20 30 40 50
R G, Gate Resistance ( Ω)
A
60
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
10
RG = 50 Ω
VGE = 15V
VCC = 480V
IC = 13A
1
IC = 6.5A
IC = 3.3A
0.1 A
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
5 Page 
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet IRG4BC20UD.PDF ] | |
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