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PDF IRGPC50MD2 Data sheet ( Hoja de datos )
| Número de pieza | IRGPC50MD2 | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | IRF | |
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PD - 9.1145A
IRGPC50MD2
INSULATED GATE BIPOLAR TRANSISTOR
WITH ULTRAFAST SOFT RECOVERY
DIODE
Features
• Short circuit rated -10µs @125°C, V GE = 15V
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for medium operating frequency ( 1 to
10kHz) See Fig. 1 for Current vs. Frequency curve
G
C
E
n-channel
Short Circuit Rated
Fast CoPack IGBT
VCES = 600V
VCE(sat) ≤ 2.0V
@VGE = 15V, IC = 35A
Description
Co-packaged IGBTs are a natural extension of International Rectifier's well
known IGBT line. They provide the convenience of an IGBT and an ultrafast
recovery diode in one package, resulting in substantial benefits to a host of
high-voltage, high-current, applications.
These new short circuit rated devices are especially suited for motor control
and other applications requiring short circuit withstand capability.
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
tsc
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
C-399
TO-247AC
Max.
600
60
35
120
120
25
120
10
± 20
200
78
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Units
V
A
µs
V
W
°C
Min.
—
—
—
—
—
Typ.
—
—
0.24
—
6 (0.21)
Max.
0.64
0.83
—
40
—
Units
°C/W
g (oz)
Revision 2
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IRGPC50MD2
6000
V GE = 0V,
f = 1MHz
Cies = Cge + C gc , Cce SHORTED
5000
Cres = C gc
Coes = C ce + C gc
Cies
4000
Coes
3000
2000
Cres
1000
0
1 10 100
V C E , C ollector-to-Em itter V oltage (V )
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
20
V CE = 4 00 V
I C = 35A
16
12
8
4
0
0 30 60 90
Q G , Total G ate C harge (nC )
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
120
6.6
VCC = 480V
VG E = 15V
6.5 TC = 25°C
IC = 35A
6.4
6.3
6.2
6.1
6.0
0
10 20 30 40 50 60
R G , Gate R esistance (Ω )
W
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
100
RG = 5 Ω
V GE = 15V
V CC = 480V
10
IC = 70A
IC = 35A
IC = 17A
1A
-60 -40 -20 0 20 40 60 80 100 120 140 160
TC, C ase Tem perature (°C )
Fig. 10 - Typical Switching Losses vs.
Case Temperature
C-403
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| PDF Descargar | [ Datasheet IRGPC50MD2.PDF ] | |
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