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PDF IRGP20B120U-E Data sheet ( Hoja de datos )
| Número de pieza | IRGP20B120U-E | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | IRF | |
| Logotipo |  |
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INSULATED GATE BIPOLAR TRANSISTOR
Features
• UltraFast Non Punch Through (NPT)
Technology
• 10 µs Short Circuit capability
• Square RBSOA
• Positive VCE(on) Temperature Coefficient
• Extended lead TO-247 package
Benefits
• Benchmark efficiency above 20KHz
• Optimized for Welding, UPS, and Induction Heating
applications
• Rugged with UltraFast performance
• Low EMI
• Significantly Less Snubber required
• Excellent Current sharing in Parallel operation
• Longer leads for easier mounting
PD- 94117
IRGP20B120U-E
C
G
E
n-channel
UltraFast IGBT
VCES = 1200V
VCE(on) typ. = 3.05V
VGE = 15V, IC = 20A, 25°C
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EAS @ TC =25°C
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current (Fig.1)
Continuous Collector Current (Fig.1)
Pulsed Collector Current (Fig.3, Fig. CT.5)
Clamped Inductive Load Current(Fig.4, Fig. CT.2)
Gate-to-Emitter Voltage
Avalanche Energy, single pulse
IC = 25A, VCC = 50V, RGE = 25ohm
L = 200µH (Fig. CT.6)
Maximum Power Dissipation (Fig.2)
Maximum Power Dissipation (Fig.2)
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case - IGBT
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
TO-247AD
Max.
1200
40
20
120
120
± 20
65
300
120
-55 to + 150
300, (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Units
V
A
V
mJ
W
°C
Min.
–––
–––
–––
Typ.
–––
0.24
–––
Max.
0.42
–––
40
Units
°C/W
Wt
ZθJC
www.irf.com
Weight
–––
Transient Thermal Impedance Junction-to-Case (Fig.18)
6 (0.21)
––– g (oz)
1
03/06/01
1 page  
IRGP20B120U-E
F ig .98 - T y p ic a l V CE v s V G E
T j= -4 0 °C
20
18
16
14
12
10 I CE =10A
8 I CE =20A
I CE =40A
6
4
2
0
6 8 10 12 14 16 18 20
V GE (V )
F ig .1101 - T y p ic a l V CE v s V G E
T j= 1 2 5 °C
20
18
16
14
12
10 I CE =10A
8 I CE =20A
I CE =40A
6
4
2
0
68
www.irf.com
10 12 14 16 18 20
V GE (V )
F ig .190 - T y p ic a l V CE v s V G E
T j= 2 5 °C
20
18
16
14
12
10 I CE =10A
8 I CE =20A
I CE =40A
6
4
2
0
6
8 10 12 14 16 18 20
V GE (V)
Fig.1121 - Ty p. Trans fer C harac teris tic s
V CE =20V; tp=20µ s
250
T j=2 5°C
2 2 5 T j=1 25 °C
200
175
150
125
100
75
50
2 5 T j=1 25 °C
0
04
T j=2 5°C
8 12
V GE (V )
16
20
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRGP20B120U-E.PDF ] | |
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