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PDF IRGP430U Data sheet ( Hoja de datos )
| Número de pieza | IRGP430U | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | IRF | |
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INSULATED GATE BIPOLAR TRANSISTOR
PD - 9.780A
IRGP430U
UltraFast IGBT
Features
• Switching-loss rating includes all "tail" losses
• Optimized for high operating frequency (over 5kHz)
See Fig. 1 for Current vs. Frequency curve
C
G
E
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high-
current applications.
VCES = 500V
VCE(sat) ≤ 3.0V
@VGE = 15V, IC = 15A
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
TO-247AC
Max.
500
25
15
50
50
±20
10
100
42
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Units
V
A
V
mJ
W
°C
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
C-599
Min.
—
—
—
—
Typ.
—
0.24
—
6 (0.21)
Max.
1.2
—
40
—
Units
°C/W
g (oz)
Revision 0
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IRGP430U
1400
V GE = 0V,
f = 1MHz
Cies = Cge + C gc , Cce SHORTED
1200
Cres = C gc
Coes = C ce + C gc
100 0 Cies
800 Coes
600
400 Cres
200
0
1 10 100
V CE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
20
VCE = 400V
IC = 15A
16
12
8
4
0
0 10 20 30
Q G , Total G ate Charge (nC )
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
40
0.48
VCC = 400V
VGE = 15V
TC = 25°C
0.46 I C = 15A
0.44
0.42
0.40
0.38
0
10 20 30 40 50
R G , Gate Resistance (Ω )
60
W
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
10
RG = 50 Ω
V GE = 1 5 V
V CC = 40 0V
IC = 30A
1
I C = 15A
I C = 7.5A
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
TC, C ase Tem peratu re (°C )
Fig. 10 - Typical Switching Losses vs.
Case Temperature
C-603
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| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IRGP430U.PDF ] | |
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