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PDF IRGPC20MD2 Data sheet ( Hoja de datos )
| Número de pieza | IRGPC20MD2 | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY | |
| Fabricantes | IRF | |
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PD - 9.1144
IRGPC20MD2
INSULATED GATE BIPOLAR TRANSISTOR
WITH ULTRAFAST SOFT RECOVERY
DIODE
Features
• Short circuit rated -10µs @125°C, V GE = 15V
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for medium operating frequency ( 1 to
10kHz) See Fig. 1 for Current vs. Frequency curve
G
C
E
n-channel
Short Circuit Rated
Fast CoPack IGBT
VCES = 600V
VCE(sat) ≤ 2.5V
@VGE = 15V, IC = 8.0A
Description
Co-packaged IGBTs are a natural extension of International Rectifier's well
known IGBT line. They provide the convenience of an IGBT and an ultrafast
recovery diode in one package, resulting in substantial benefits to a host of
high-voltage, high-current, applications.
These new short circuit rated devices are especially suited for motor control
and other applications requiring short circuit withstand capability.
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
tsc
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
C-381
TO-247AC
Max.
600
13
8.0
26
26
7.0
60
10
± 20
60
24
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Units
V
A
µs
V
W
°C
Min.
—
—
—
—
—
Typ.
—
—
0.24
—
6 (0.21)
Max.
2.1
3.5
—
40
—
Units
°C/W
g (oz)
Revision 2
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IRGPC20MD2
600
V GE = 0V,
f = 1MHz
Cies = Cge + C gc , Cce SHORTED
Cres = C gc
Coes = Cce + C gc
Cies
400
Coes
200
Cres
0A
1 10 100
VCE, Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
20
VCE = 400V
IC = 8.0A
16
12
8
4
0
0 4 8 12 16
Qg , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
A
20
1.64
VCC = 480V
VGE = 15V
TC = 25°C
I C = 8.0A
1.62
1.60
10
RG = 50Ω
VGE = 15V
VCC = 480V
1
I C = 16A
IC = 8.0A
IC = 4.0A
1.58
1.56
0
10 20 30 40 50
RG, Gate Resistance (Ω)
60
W
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
0.1 A
-60 -40 -20 0 20 40 60 80 100 120 140 160
TC, Case Temperature (°C)
Fig. 10 - Typical Switching Losses vs.
Case Temperature
C-385
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| PDF Descargar | [ Datasheet IRGPC20MD2.PDF ] | |
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