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PDF ICX224AQF Data sheet ( Hoja de datos )

Número de pieza ICX224AQF
Descripción CCD Image Sensor with Square Pixel for Color Cameras
Fabricantes Sony 
Logotipo Sony Logotipo



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ICX224AQF
Diagonal 8mm (Type 1/2) Frame Readout CCD Image Sensor with Square Pixel for Color Cameras
Description
The ICX224AQF is a diagonal 8mm (Type 1/2)
interline CCD solid-state image sensor with a square
pixel array and 2.02M effective pixels. Frame
readout allows all pixels' signals to be output
independently within approximately 1/7.5 second.
Also, the adoption of high frame rate readout mode
supports 30 frames per second which is four times
the speed in frame readout mode. This chip features
an electronic shutter with variable charge-storage
time. Adoption of a design specially suited for frame
readout ensures a saturation signal level equivalent
to when using field readout. High resolution and high
color reproductivity are achieved through the use of
R, G, B primary color mosaic filters. Further, high
sensitivity and low dark current are achieved through
the adoption of Super HAD CCD technology.
This chip is suitable for applications such as electronic
still cameras, PC input cameras, etc.
20 pin SOP (Plastic)
Pin 1
2
V
Features
Supports frame readout
High horizontal and vertical resolution
Supports high frame rate readout mode: 30 frames/s
4
Pin 11
H
48
Square pixel
Horizontal drive frequency: 18MHz
Optical black position
No voltage adjustments (reset gate and substrate bias are not adjusted.)
(Top View)
R, G, B primary color mosaic filters on chip
High color reproductivity, high sensitivity, low smear
Continuous variable-speed shutter
Low dark current, excellent anti-blooming characteristics
20-pin high-precision plastic package (top/bottom dual surface reference possible)
10
Device Structure
Interline CCD image sensor
Image size:
Diagonal 8mm (Type 1/2)
Total number of pixels: 1688 (H) × 1248 (V) approx. 2.11M pixels
Number of effective pixels: 1636 (H) × 1236 (V) approx. 2.02M pixels
Number of active pixels: 1620 (H) × 1220 (V) approx. 1.98M pixels
Chip size:
7.6mm (H) × 6.2mm (V)
Unit cell size:
3.9µm (H) × 3.9µm (V)
Optical black:
Horizontal (H) direction: Front 4 pixels, rear 48 pixels
Vertical (V) direction: Front 10 pixels, rear 2 pixels
Number of dummy bits: Horizontal 28
Vertical 1 (even fields only)
Substrate material:
Silicon
Super HAD CCD is a registered trademark of Sony Corporation. Super HAD CCD is a CCD that drastically improves sensitivity by introducing
newly developed semiconductor technology by Sony Corporation into Sony's high-performance HAD (Hole-Accumulation Diode) sensor
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
–1–
E98X32B99

1 page




ICX224AQF pdf
ICX224AQF
Clock Equivalent Circuit Constant
Item Symbol
Capacitance between vertical transfer
clock and GND
CφV1A, CφV3A
CφV1B, CφV3B
CφV2, CφV4
CφV1A2, CφV3A4
CφV1B2, CφV3B4
CφV23A, CφV41A
Capacitance between vertical transfer
clocks
CφV23B, CφV41B
CφV1A3A
CφV1B3B
CφV1A3B, CφV1B3A
CφV24
CφV1A1B, CφV3A3B
Capacitance between horizontal transfer CφH1
clock and GND
CφH2
Capacitance between horizontal transfer
clocks
CφHH
Capacitance between reset gate clock
and GND
CφRG
Capacitance between substrate clock
and GND
CφSUB
R1A, R3A
Vertical transfer clock series resistor
Vertical transfer clock ground resistor
Horizontal transfer clock series resistor
R1B, R3B
R2, R4
RGND
RφH
Min.
Typ.
390
1800
1800
220
470
120
330
120
120
270
330
180
120
120
30
8
820
75
100
120
30
5
Max.
Unit Remarks
pF
pF
pF
pF
pF
pF
pF
pF
pF
pF
pF
pF
pF
pF
pF
pF
pF
Vφ2
Vφ1A
CφV24
CφV1A2
R1A
R2
CφV1A3A
CφV23B
CφV23A
Vφ3A
R3A
CφV1B2
CφV1A
CφV1A1B
CφV1B3A
CφV1B
CφV41A
CφV2
CφV3A
CφV3A3B
CφV1A3B
CφV3B
R1B
Vφ1B
CφV4
CφV41B
RGND
CφV1B3B
CφV3A4
CφV3B4
R3B
Vφ3B
R4
RφH
Hφ1
RφH
Hφ1
CφHH
CφH1
RφH
RφH
Hφ2
Hφ2
CφH2
Vφ4
Vertical transfer clock equivalent circuit
Horizontal transfer clock equivalent circuit
–5–

5 Page





ICX224AQF arduino
ICX224AQF
Measurement conditions
1) In the following measurements, the device drive conditions are at the typical values of the bias and clock
voltage conditions, and the frame readout mode is used.
2) In the following measurements, spot blemishes are excluded and, unless otherwise specified, the optical
black level (OB) is used as the reference for the signal output, which is taken as the value of the Gr/Gb
channel signal output or the R/B channel signal output of the measurement system.
Definition of standard imaging conditions
1) Standard imaging condition I:
Use a pattern box (luminance: 706cd/m2, color temperature of 3200K halogen source) as a subject. (Pattern
for evaluation is not applicable.) Use a testing standard lens with CM500S (t = 1.0mm) as an IR cut filter
and image at F5.6. The luminous intensity to the sensor receiving surface at this point is defined as the
standard sensitivity testing luminous intensity.
2) Standard imaging condition II:
Image a light source (color temperature of 3200K) with a uniformity of brightness within 2% at all angles.
Use a testing standard lens with CM500S (t = 1.0mm) as an IR cut filter. The luminous intensity is adjusted
to the value indicated in each testing item by the lens diaphragm.
3) Standard imaging condition III:
Image a light source (color temperature of 3200K) with a uniformity of brightness within 2% at all angles.
Use a testing standard lens (exit pupil distance –33mm) with CM500S (t = 1.0mm) as an IR cut filter. The
luminous intensity is adjusted to the value indicated in each testing item by the lens diaphragm.
1. G sensitivity, sensitivity comparison
Set to standard imaging condition I. After selecting the electronic shutter mode with a shutter speed of
1/100s, measure the signal outputs (VGr, VGb, VR and VB) at the center of each Gr, Gb, R and B channel
screen, and substitute the values into the following formulas.
VG = (VGr + VGb)/2
Sg = VG × 100/30 [mV]
Rr = VR/VG
Rb = VB/VG
2. Saturation signal
Set to standard imaging condition II. After adjusting the luminous intensity to 20 times the intensity with the
average value of the Gr signal output, 150mV, measure the minimum values of the Gr, Gb, R and B signal
outputs.
3. Smear
Set to standard imaging condition II. With the lens diaphragm at F5.6 to F8, first adjust the average value of
the Gr signal output to 150mV. Measure the average values of the Gr signal output, Gb signal output, R
signal output and B signal output (Gra, Gba, Ra, Ba), and then adjust the luminous intensity to 500 times
the intensity with the average value of the Gr signal output, 150mV. After the readout clock is stopped and
the charge drain is executed by the electronic shutter at the respective H blankings, measure the maximum
value (VSm [mV]) independent of the Gr, Gb, R and B signal outputs, and substitute the values into the
following formula.
Sm = Vsm ÷
Gra + Gba + Ra + Ba
4
×
1
500
×
1
10
× 100 [%] (1/10V method conversion value)
– 11 –

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