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Número de pieza | MBN400GR12 | |
Descripción | IGBT Module | |
Fabricantes | Hitachi | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MBN400GR12 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! Hitachi IGBT Module / Silicon N-Channel IGBT
MBN400GR12
[Rated 400A/1200V, Single-pack type]
FEATURES
· Low saturation voltage and high speed.
· Low turn-OFF switching loss.
· Low noise due to build-in free-wheeling diode.
(Ultra Soft and Fast recovery Diode (USFD))
· High reliability structure.
· Isolated heat sink (terminals to base).
CIRCUIT DIAGRAM
EC
E
G
Spec. No. IGBT-SP-99026(R1)
OUTLINE DRAWING
108
93
2-M4
E
E
G
C
Unit in mm
24
2-M6
20
29
4- φ 6.5
ABSOLUTE MAXIMUM RATINGS(TC=25°C)
Item
Symbol
Unit
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
DC
1ms
Forward Current
DC
1ms
Collector Power Dissipation
Junction Temperature
Storage Temperature
Isolation Voltage
Screw Torque
Terminals (M4/M6)
Mounting
VCES
VGES
IC
ICP
IF
IFM
PC
Tj
Tstg
Viso
-
V
V
A
A
W
°C
°C
VRMS
N·m
(kgf·cm)
Notes; *1: RMS current of Diode £ 120 Arms
*2: Recommended value 1.18 / 2.45 N·m (12 / 25 kgf·cm)
*3: Recommended value 2.45 N·m (25 kgf·cm)
Weight : 480g
Value
1200
±20
400
800
400 *1
800
2080
-40 ~ +150
-40 ~ +125
2500(AC 1 minute)
1.37(14) / 2.94(30) *2
2.94(30) *3
CHARACTERISTICS (TC=25°C)
Item Symbol Unit Min. Typ. Max.
Test Conditions
Collector-Emitter Cut-Off Current
ICES mA -
- 1.0 VCE=1200V, VGE=0V
Gate-Emitter Leakage Current
IGES nA -
- ±500 VGE=±20V, VCE=0V
Collector-Emitter Saturation Voltage
VCE(sat)
V
-
2.2 2.8 IC=400A, VGE=15V
Gate-Emitter Threshold Voltage
VGE(TO)
V
-
-
10 VCE=5V, IC=400mA
Input Capacitance
Cies pF - 37000 - VCE=10V, VGE=0V, f=1MHz
Switching Times
Rise Time
Turn-ON Time
Fall Time
Turn-Off Time
tr
ton
tf
toff
-
0.25
0.7 VCC=600V
ms
-
-
0.4 0.9 RL=1.5W
0.2 0.35 RG=2.7W *4
- 0.7 1.1 VGE=±15V
Peak Forward Voltage Drop
VFM V - 2.5 3.5 IF=400A, VGE=0V
Reverse Recovery Time
trr ms - - 0.4 IF=400A, VGE=-10V, di/dt=400A/ms
IGBT
Thermal Impedance
FWD
Rth(j-c)
Rth(j-c)
°C/W
-
0.06
- Junction to case
0.10
Notes; *4:RG value is the test condition’s value for decision of the switching times, not recommended value, please determine
the suitable RG value after the measurement of switching waveforms (overshoot voltage, etc.) with appliance mounted.
Remark; The specification given herein, is subject to change without prior notice to improve product characteristics.
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet MBN400GR12.PDF ] |
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