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IRF - RADIATION HARDENED POWER MOSFET THRU-HOLE

Numéro de référence IRHM7260
Description RADIATION HARDENED POWER MOSFET THRU-HOLE
Fabricant IRF 
Logo IRF 





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IRHM7260 fiche technique
PD - 91332D
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (T0-254AA)
IRHM7260
JANSR2N7433
200V, N-CHANNEL
REF: MIL-PRF-19500/663
RAD Hard™ HEXFET® TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHM7260 100K Rads (Si)
IRHM3260 300K Rads (Si)
IRHM4260 600K Rads (Si)
IRHM8260 1000K Rads (Si)
R DS(on) ID QPL Part Number
0.07035*A JANSR2N7433
0.07035*A JANSF2N7433
0.07035*A JANSG2N7433
0.07035*A JANSH2N7433
International Rectifier’s RADHard HEXFET® technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
TO-254AA
Features:
! Single Event Effect (SEE) Hardened
! Low RDS(on)
! Low Total Gate Charge
! Proton Tolerant
! Simple Drive Requirements
! Ease of Paralleling
! Hermetically Sealed
! Ceramic Package
! Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
Units
35*
25 A
161
250 W
2.0 W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
±20
Single Pulse Avalanche Energy
500
Avalanche Current
35
Repetitive Avalanche Energy
25
Peak Diode Recovery dv/dt
5.7
Operating Junction
-55 to 150
Storage Temperature Range
Lead Temperature
300 ( 0.063 in.(1.6mm) from case for 10s)
Weight
9.3 (Typical )
V
mJ
A
mJ
V/ns
oC
g
*Current limited by pin diameter
For footnotes refer to the last page
www.irf.com
1
8/14/01

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