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PDF IRHM9150 Data sheet ( Hoja de datos )
| Número de pieza | IRHM9150 | |
| Descripción | RADIATION HARDENED POWER MOSFET THRU-HOLE | |
| Fabricantes | IRF | |
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PD - 90889D
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
Product Summary
Part Number Radiation Level RDS(on)
IRHM9150 100K Rads (Si) 0.080Ω
IRHM93150 300K Rads (Si) 0.080Ω
IRHM9150
JANSR2N7422
100V, P-CHANNEL
REF: MIL-PRF-19500/662
RAD Hard™ HEXFET® TECHNOLOGY
ID
-22A
-22A
QPL Part Number
JANSR2N7422
JANSF2N7422
International Rectifier’s RADHard HEXFETTM technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
TO-254AA
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n SimpleDriveRequirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Ceramic Package
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
ID @ VGS = -12V, TC = 25°C
ID @ VGS = -12V, TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
-22
-14 A
-88
150 W
1.2 W/°C
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
±20
500
-22
15
-23
V
mJ
A
mJ
V/ns
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
-55 to 150
300 ( 0.063 in. (1.6mm) from case for 10s)
oC
Weight
9.3 (typical)
g
For footnotes refer to the last page
www.irf.com
1
2/18/03
1 page  
Pre-Irradiation
IRHM9150
7000
6000
5000
4000
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
3000
2000
Coss
1000
0
1
Crss
10 100
-VDS , Drain-to-Source Voltage (V)
Fig5. TypicalCapacitanceVs.
Drain-to-SourceVoltage
20 ID = -22A
16
12
VDS =-80V
VDS = -50V
VDS = -20V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 40 80 120 160 200
QG, Total Gate Charge (nC)
Fig6. TypicalGateChargeVs.
Gate-to-SourceVoltage
100
TJ = 150° C
10
TJ = 25°C
VGS = 0 V
1
0.0 1.0 2.0 3.0 4.0
-VSD ,Source-to-Drain Voltage (V)
Fig7. TypicalSource-DrainDiode
ForwardVoltage
www.irf.com
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
100us
1ms
10
10ms
TC = 25 °C
TJ = 150 °C
Single Pulse
1
1 10
100
-VDS, Drain-to-Source Voltage (V)
1000
Fig8. MaximumSafeOperatingArea
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRHM9150.PDF ] | |
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