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PDF IRHM9260 Data sheet ( Hoja de datos )
| Número de pieza | IRHM9260 | |
| Descripción | RADIATION HARDENED POWER MOSFET THRU-HOLE | |
| Fabricantes | IRF | |
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PD - 93858
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
Product Summary
Part Number Radiation Level
IRHM9260 100K Rads (Si)
IRHM93260 300K Rads (Si)
RDS(on)
0.160Ω
0.160Ω
IRHM9260
JANSR2N7426
200V, P-CHANNEL
REF: MIL-PRF-19500/660
RAD-Hard™ HEXFET® TECHNOLOGY
ID QPL Part Number
-27A JANSR2N7426
-27A JANSF2N7426
TO-254AA
International Rectifier’s RAD-HardTM HEXFET®
MOSFET technology provides high performance
power MOSFETs for space applications. This tech-
nology has over a decade of proven performance
and reliability in satellite applications. These de-
vices have been characterized for both Total Dose
and Single Event Effects (SEE). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These de-
vices retain all of the well established advantages
of MOSFETs such as voltage control, fast switch-
ing, ease of paralleling and temperature stability
of electrical parameters.
Features:
n Single Event Effect (SEE) Hardened
n Neutron Tolerant
n Identical Pre- and Post-Electrical Test Conditions
n Repetitive Avalanche Ratings
n Dynamic dv/dt Ratings
n Simple Drive Requirements
n Ease of Paralleling
n Hermatically Sealed
n Electically Isolated
n Ceramic Eyelets
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current ➀
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
T J Operating Junction
TSTG
Storage Temperature Range
Lead Temperature
Weight
Units
-27
-17 A
-108
250 W
2.0 W/°C
±20 V
500 mJ
-27 A
25 mJ
-9.0
-55 to 150
V/ns
oC
300 (0.063in./1.6mm from case for 10s)
9.3 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
11/27/00
1 page  
Pre-Irradiation
IRHM9260, JANSR2N7426
10000
8000
6000
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
4000
2000
0
1
Coss
Crss
10
-VDS , Drain-to-Source Voltage (V)
100
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 ID = -27A
16
VDS = 160V
VDS = 100V
VDS = 40V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 50 100 150 200 250 300
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
TJ = 150° C
10
TJ = 25 ° C
1
0.1
0.0
VGS = 0 V
1.0 2.0 3.0 4.0
-VSD ,Source-to-Drain Voltage (V)
5.0
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
100us
1ms
10
10ms
TC = 25°C
TJ = 150° C
Single Pulse
1
10 100
-VDS , Drain-to-Source Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRHM9260.PDF ] | |
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