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PDF IRHMS597260 Data sheet ( Hoja de datos )
| Número de pieza | IRHMS597260 | |
| Descripción | RADIATION HARDENED POWER MOSFET THRU-HOLE | |
| Fabricantes | IRF | |
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PD - 94605
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (Low-Ohmic TO-254AA)
IRHMS597260
200V, P-CHANNEL
4# TECHNOLOGY
c
Product Summary
Part Number Radiation Level
IRHMS597260 100K Rads (Si)
IRHMS593260 300K Rads (Si)
RDS(on)
0.103Ω
0.103Ω
ID
-32A
-32A
Low-Ohmic
TO-254AA
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
Features:
n Single Event Effect (SEE) Hardened
n Neutron Tolerant
n Identical Pre- and Post-Electrical Test Conditions
n Repetitive Avalanche Ratings
n Dynamic dv/dt Ratings
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Electically Isolated
n Ceramic Eyelets
n Light Weight
n High Electrical Conductive Package
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current ➀
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
-32
-20
-128
208
1.67
A
W
W/°C
VGS
Gate-to-Source Voltage
±20 V
EAS Single Pulse Avalanche Energy ➁
354
mJ
IAR Avalanche Current ➀
-32 A
EAR
Repetitive Avalanche Energy ➀
25 mJ
dv/dt
Peak Diode Recovery dv/dt ➂
-4.1 V/ns
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
-55 to 150
300 (0.063in./1.6mm from case for 10s)
9.3 ( Typical )
oC
g
For footnotes refer to the last page
www.irf.com
1
02/13/03
1 page  
Pre-Irradiation
IRHMS597260
12000
10000
8000
6000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds+ Cgd
Ciss
4000
2000
0
1
Coss
Crss
10
-VDS, Drain-to-Source Voltage (V)
100
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
16
ID= -32A
12
VDS= -160V
VDS= -100V
VDS= -40V
8
4
0
0 20 40 60 80 100 120
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
TJ = 150°C
10
1
TJ = 25°C
0.1
0.5
VGS = 0V
1.5 2.5 3.5 4.5 5.5
-VSD , Source-to-Drain Voltage (V)
6.5
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µs
10
1ms
Tc = 25°C
Tj = 150°C
Single Pulse
1
1 10
10ms
100 1000
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRHMS597260.PDF ] | |
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