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PDF IRFSL41N15D Data sheet ( Hoja de datos )
| Número de pieza | IRFSL41N15D | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | IRF | |
| Logotipo |  |
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Applications
l High frequency DC-DC converters
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
VDSS
150V
PD - 93804B
IRFB41N15D
IRFIB41N15D
IRFS41N15D
IRFSL41N15D
HEXFET® Power MOSFET
RDS(on) max
0.045:
ID
41A
TO-220AB TO-220 FullPak D2Pak
TO-262
IRFB41N15D IRFIB41N15D IRFS41N15D IRFSL41N15D
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
cIDM Pulsed Drain Current
PD @TA = 25°C Power Dissipation, D2Pak
PD @TC = 25°C Power Dissipation, TO-220
PD @TC = 25°C Power Dissipation, Fullpak
Linear Derating Factor, TO-220
Linear Derating Factor, Fullpak
VGS
dv/dt
TJ
TSTG
Gate-to-Source Voltage
ePeak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter
RθJC
Junction-to-Case
RθJC Junction-to-Case, Fullpak
hRθcs Case-to-Sink, Flat, Greased Surface
hRθJA Junction-to-Ambient, TO-220
iRθJA Junction-to-Ambient, D2Pak
RθJA Junction-to-Ambient, Fullpak
Notes through are on page 12
www.irf.com
Max.
41
29
164
3.1
200
48
1.3
0.32
± 30
2.7
-55 to + 175
300 (1.6mm from case )
1.1(10)
Typ.
–––
–––
0.50
–––
–––
–––
Max.
0.75
3.14
–––
62
40
65
Units
A
W
W/°C
V
V/ns
°C
N•m (lbf•in)
Units
°C/W
1
07/16/03
1 page  
IRFB/IRFIB/IRFS/IRFSL41N15D
50
40
30
20
10
0
25 50 75 100 125 150 175
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
VDS
VGS
RG
RD
D.U.T.
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.1 0.10
0.05
0.02
0.01
0.01
0.00001
PDM
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t1 / t 2
2. Peak TJ = P DM x ZthJC + TC
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
1
5
5 Page 
IRFB/IRFIB/IRFS/IRFSL41N15D
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
IGBT
1- GATE
2- COLLECTOR
3- EMITTER
TO-262 Part Marking Information
EXAMPLE: T HIS IS AN IRL3103L
LOT CODE 1789
ASS EMBLED ON WW 19, 1997
IN THE ASS EMBLY LINE "C"
INT ERNATIONAL
RE CT IF IE R
LOGO
AS SEMBLY
LOT CODE
www.irf.com
PART NUMBER
DATE CODE
YEAR 7 = 1997
WEEK 19
LINE C
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet IRFSL41N15D.PDF ] | |
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