DataSheetWiki


IRFS720B fiches techniques PDF

Fairchild - 400V N-Channel MOSFET

Numéro de référence IRFS720B
Description 400V N-Channel MOSFET
Fabricant Fairchild 
Logo Fairchild 





1 Page

No Preview Available !





IRFS720B fiche technique
November 2001
IRF720B/IRFS720B
400V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies and
electronic lamp ballasts based on half bridge.
Features
• 3.3A, 400V, RDS(on) = 1.75@VGS = 10 V
• Low gate charge ( typical 14 nC)
• Low Crss ( typical 11 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
G DS
TO-220
IRF Series
GD S
TO-220F
IRFS Series
G
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS Single Pulsed Avalanche Energy
(Note 2)
IAR Avalanche Current
(Note 1)
EAR Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature
IRF720B
IRFS720B
400
3.3 3.3 *
2.1 2.1 *
13.2 13.2 *
± 30
240
3.3
4.9
5.5
49 33
0.39 0.27
-55 to +150
300
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case Max.
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient Max.
IRF720B
2.57
0.5
62.5
IRFS720B
3.74
--
62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
©2001 Fairchild Semiconductor Corporation
Rev. A, November 2001

PagesPages 10
Télécharger [ IRFS720B ]


Fiche technique recommandé

No Description détaillée Fabricant
IRFS720A N-Channel MOSFET Transistor Inchange Semiconductor
Inchange Semiconductor
IRFS720A Power MOSFET ( Transistor ) Samsung
Samsung
IRFS720B 400V N-Channel MOSFET Fairchild
Fairchild

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche