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PDF IRFS820B Data sheet ( Hoja de datos )
| Número de pieza | IRFS820B | |
| Descripción | 500V N-Channel MOSFET | |
| Fabricantes | Fairchild | |
| Logotipo |  |
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November 2001
IRF820B/IRFS820B
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies,
power factor correction and electronic lamp ballasts based
on half bridge.
Features
• 2.5A, 500V, RDS(on) = 2.6Ω @VGS = 10 V
• Low gate charge ( typical 14 nC)
• Low Crss ( typical 10 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
G DS
TO-220
IRF Series
GD S
TO-220F
IRFS Series
G
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS Single Pulsed Avalanche Energy
(Note 2)
IAR Avalanche Current
(Note 1)
EAR Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature
IRF820B
IRFS820B
500
2.5 2.5 *
1.6 1.6 *
8.0 8.0 *
± 30
200
2.5
4.9
5.5
49 33
0.39 0.27
-55 to +150
300
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case Max.
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient Max.
Typ
2.57
0.5
62.5
Max
3.74
--
62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
©2001 Fairchild Semiconductor Corporation
Rev. A, November 2001
1 page  
Typical Characteristics (Continued)
D = 0.5
100
0 .2
1 0 -1
0 .1
0 .0 5
0 .0 2
0 .0 1
sin g le p u lse
※ N otes :
1. Z θ JC(t) = 2.57 ℃ /W M ax.
2. D uty Factor, D =t1/t2
3 . T JM - T C = P DM * Z θ JC(t)
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S qu a re W ave P u lse D u ra tion [se c]
101
Figure 11-1. Transient Thermal Response Curve for IRF820B
D = 0.5
100
0.2
0.1
0.05
1 0 -1
0.02
0.01
sin gle pu lse
※ N otes :
1. Z θ JC(t) = 3.74 ℃ /W M ax.
2. D uty Factor, D =t1/t2
3 . T JM - T C = P DM * Z θ JC(t)
PDM
t1
t2
1 0 -2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S qu a re W ave P u lse D u ra tion [se c]
101
Figure 11-2. Transient Thermal Response Curve for IRFS820B
©2001 Fairchild Semiconductor Corporation
Rev. A, November 2001
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRFS820B.PDF ] | |
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