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IRFS9N60A fiches techniques PDF

IRF - SMPS MOSFET

Numéro de référence IRFS9N60A
Description SMPS MOSFET
Fabricant IRF 
Logo IRF 





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IRFS9N60A fiche technique
PD - 91817A
SMPS MOSFET
IRFS9N60A
Applications
l Switch Mode Power Supply ( SMPS )
l Uninterruptable Power Supply
l High Speed Power Switching
HEXFET® Power MOSFET
VDSS
600V
RDS(on) max ID
0.75
9.2A
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
G DS
D2Pak
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
9.2
5.8
37
170
1.3
± 30
5.0
-55 to + 150
300 (1.6mm from case )
Units
A
W
W/°C
V
V/ns
°C
Applicable Off Line SMPS Topologies:
l Active Clamped Forward
l Main Switch
Notes  through … are on page 9
www.irf.com
1
9/23/99

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