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Numéro de référence | IRFSL17N20D | ||
Description | Power MOSFET ( Transistor ) | ||
Fabricant | IRF | ||
Logo | |||
1 Page
SMPS MOSFET
PD- 93902A
IRFB17N20D
IRFS17N20D
IRFSL17N20D
HEXFET® Power MOSFET
Applications
l High frequency DC-DC converters
VDSS
200V
RDS(on) max
0.17Ω
ID
16A
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRFB17N20D
D2Pak
TO-262
IRFS17N20D IRFSL17N20D
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Max.
16
12
64
3.8
140
0.90
± 30
2.7
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V/ns
°C
Typical SMPS Topologies
l Telecom 48V input Forward Converter
Notes through
are on page 11
www.irf.com
1
4/26/00
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Pages | Pages 11 | ||
Télécharger | [ IRFSL17N20D ] |
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