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IRFS140A fiches techniques PDF

Fairchild - Advanced Power MOSFET

Numéro de référence IRFS140A
Description Advanced Power MOSFET
Fabricant Fairchild 
Logo Fairchild 





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IRFS140A fiche technique
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
175 ΟC Operating Temperature
Lower Leakage Current : 10 µA (Max.) @ VDS = 100V
Lower RDS(ON) : 0.041 (Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25 ΟC)
Continuous Drain Current (TC=100 ΟC)
Drain Current-Pulsed
O1
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
O2
O1
O1
O3
Total Power Dissipation (TC=25 ΟC)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8”from case for 5-seconds
IRFS140A
BVDSS = 100 V
RDS(on) = 0.052
ID = 23 A
TO-3PF
1
2
3
1.Gate 2. Drain 3. Source
Value
100
23
16.2
120
+_ 20
529
23
7.2
6.5
72
0.48
- 55 to +175
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/ ΟC
ΟC
Thermal Resistance
Symbol
R θJC
RθJA
Characteristic
Junction-to-Case
Junction-to-Ambient
©1999 Fairchild Semiconductor Corporation
Typ.
--
--
Max.
2.08
40
Units
ΟC /W
Rev. B

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