DataSheetWiki


IRFS350A fiches techniques PDF

IRF - Advanced Power MOSFET

Numéro de référence IRFS350A
Description Advanced Power MOSFET
Fabricant IRF 
Logo IRF 





1 Page

No Preview Available !





IRFS350A fiche technique
$GYDQFHG 3RZHU 026)(7
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current: 10µA (Max.) @ VDS = 400V
Low RDS(ON): 0.254(Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25°C)
Continuous Drain Current (TC=100°C)
Drain Current-Pulsed
(1)
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
(2)
Avalanche Current
(1)
Repetitive Avalanche Energy
(1)
Peak Diode Recovery dv/dt
(3)
Total Power Dissipation (TC=25°C)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
IRFS350A
BVDSS = 400 V
RDS(on) = 0.3
ID = 11.5 A
TO-3PF
1
2
3
1.Gate 2. Drain 3. Source
Value
400
11.5
7.3
68
±30
1134
11.5
9.2
4.0
92
0.74
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
Thermal Resistance
Symbol
RθJC
RθJA
Characteristic
Junction-to-Case
Junction-to-Ambient
Typ.
--
--
Max.
1.35
40
Units
°C/W
Rev. B
©1999 Fairchild Semiconductor Corporation

PagesPages 7
Télécharger [ IRFS350A ]


Fiche technique recommandé

No Description détaillée Fabricant
IRFS350 Power MOSFET ( Transistor ) Fairchild Semiconductor
Fairchild Semiconductor
IRFS3507 Power MOSFET ( Transistor ) IRF
IRF
IRFS3507 (IRFx3507) HEXFET Power MOSFET International Rectifier
International Rectifier
IRFS350A N-Channel MOSFET Transistor Inchange Semiconductor
Inchange Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche