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PDF TA2109F Data sheet ( Hoja de datos )
| Número de pieza | TA2109F | |
| Descripción | RF AMPLIFIER FOR DIGITAL SERVO CD SYSTEM | |
| Fabricantes | Toshiba | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de TA2109F (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic
TA2109F
RF Amplifier for Digital Servo CD System
TA2109F is a 3-beam type PUH compatible RF Amplifier for
Digital Servo to be used in the CD system.
In combination with a CMOS single chip processor
TC9432AF/TC9462F a CD system can be composed very simply.
Features
· Built in amplifier for reference (VREF, 2 VREF) supply.
· Built in Auto Laser Power Control circuit.
· Built in RF amplifier.
· Built in focus error amp and tracking error amp.
· Built in sub-beam adder signal amplifier.
· Capable of tracking balance control with TC9432AF/TC9462F.
· Capable of RF gain adjustment circuit with TC9432AF/TC9462F.
· Built in signal amplifier for track counter.
· Capable of 4 times speed operation.
· 24 pin mini flat package.
Weight: 0.3 g (typ.)
TA2109F
1 2002-08-06
1 page  
Characteristics
Transfer resistance
TE
TPI (TNI)
→ TEO
SBAD
TPI (TNI)
→ SBAD
Transfer resistance range
Max transfer resistance
Min transfer resistance
Gain balance
Frequency characteristic
Cut-Off frequency 1
Cut-Off frequency 2
Output offset voltage
Noise/Distortion rate
Upper limit output voltage
Lower limit output voltage
Permissive load
resistance
Transfer resistance
Frequency characteristic
Noise/Distortion rate
Operation reference
voltage
RFRP
RFIS
→ RFRP
Upper limit output voltage
Permissive load
resistance
Gain voltage
Detection frequency
characteristic
Operation reference
voltage 1
Operation reference
voltage 2
Permissive load
resistance
Symbol
RT
∆RT
GB
fc1
fc2
VOS
THD
VOH
VOL
RLM
RT
fc
THD
VOPR
VOH
RLM
Gv
fc
VOPR1
VOPR2
RLM
Test
Circuit
Test Condition
1
f = 1 kHz, TEB = VR,
RNF = 33 kΩ
TEB = VR reference
1 TEB = GND
TEB = 2 VR
1 TEB = VR
1 RNF = 33 kΩ
1 VR reference, input open
1 f = 1 kHz, VTEO = 2.0 Vp-p
1 GND reference
1 GND reference
1―
1 f = 1 kHz, TEB = VR
1 −3dB point
1 f = 1 kHz, VSBAD = 1.5 Vp-p
TNI/TPI = VR, VR reference
1
TNI/TPI = HiZ, VR reference
1 GND reference
1―
1―
― SEL = VCC
1 VR reference, No signal
1
VR reference, 700 kHz,
1.2 Vp-p
1―
TA2109F
Min Typ. Max Unit
1.53 1.70 1.87 MΩ
35 45 55
−55 −45 −35
−1.0 ― +1.0
%
%
dB
―
―
−80
―
3.8
―
10
416
―
―
−1.1
−1.2
3.8
10
1.37
―
44
240
―
−40
―
―
―
520
44
−40
−1.0
−1.1
―
―
1.46
100
―
―
+80
―
―
0.5
―
624
―
―
−0.9
−1.0
―
―
1.54
―
kHz
kHz
mV
dB
V
V
kΩ
kΩ
kHz
dB
V
V
kΩ
V/V
kHz
−1.1 −1.0 −0.9
V
+0.65 +0.75 +0.85 V
10 ― ― kΩ
Note: If the IC is used abnormally (ex. wrongly mounted), it may be damaged or destroyed.
5 2002-08-06
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet TA2109F.PDF ] | |
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