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Número de pieza | IRG4BC30KD-S | |
Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
Fabricantes | International Rectifier | |
Logotipo | ||
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No Preview Available ! PD -91594C
IRG4BC30KD-S
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
C
• High short circuit rating optimized for motor control,
tsc =10µs, @360V VCE (start), TJ = 125°C,
VGE = 15V
• Combines low conduction losses with high
switching speed
G
• tighter parameter distribution and higher efficiency
than previous generations
• IGBT co-packaged with HEXFREDTM ultrafast,
E
n-channel
ultrasoft recovery antiparallel diodes
Benefits
• Latest generation 4 IGBTs offer highest power
density motor controls possible
• HEXFREDTM diodes optimized for performance
with IGBTs. Minimized recovery characteristic
reduce noise, EMI and switching losses
• This part replaces the IRGBC30KD2-S and
IRGBC30MD2-S products
• For hints see design tip 97003
Absolute Maximum Ratings
Short Circuit Rated
UltraFast IGBT
VCES = 600V
VCE(on) typ. = 2.21V
@VGE = 15V, IC = 16A
D 2Pak
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
tsc
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Thermal Resistance
Max.
600
28
16
58
58
12
58
10
± 20
100
42
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Units
V
A
µs
V
W
°C
RθJC
RθJC
RθCS
RθJA
Wt
www.irf.com
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient ( PCB Mounted,steady-state)U
Weight
Typ.
–––
0.5
–––
1.44
Max.
1.2
2.5
–––
40
–––
Units
°C/W
g
1
4/24/2000
1 page 1500
1200
900
VGE = 0V, f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
Cies
600
300
0
1
Coes
Cres
10 100
VCE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
IRG4BC30KD-S
20
VCC = 400V
I C = 16A
16
12
8
4
0
0 20 40 60 80
QG , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
1.50
VCC = 480V
VGE = 15V
TJ = 25 ° C
1.40 IC = 16A
1.30
1.20
1.10
1.00
0
10 20 30 40
RGRG, ,GGaatteeRReessistaannccee ((OΩh)m)
50
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
10 RG = O23hΩm
VGE = 15V
VCC = 480V
1
IC = 32 A
IC = 16 A
IC = 88.0AA
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet IRG4BC30KD-S.PDF ] |
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