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PDF IRG4BC30U Data sheet ( Hoja de datos )
| Número de pieza | IRG4BC30U | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | International Rectifier | |
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PD - 91452E
INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC30U
UltraFast Speed IGBT
Features
• UltraFast: optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• Industry standard TO-220AB package
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 1.95V
@VGE = 15V, IC = 12A
Benefits
• Generation 4 IGBTs offer highest efficiency available
• IGBTs optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
www.irf.com
TO-220AB
Max.
600
23
12
92
92
± 20
10
100
42
-55 to + 150
300 (0.063 in. (1.6mm from case )
10 lbf•in (1.1N•m)
Units
V
A
V
mJ
W
°C
Typ.
–––
0.50
–––
2 (0.07)
Max.
1.2
–––
80
–––
Units
°C/W
g (oz)
1
4/17/2000
1 page  
IRG4BC30U
2000
V GE = 0V,
f = 1MHz
C ies = C ge + C gc , Cce SH OR TE D
C res = C gc
1600
C oes = C ce + C gc
C ies
1200
800 Coes
400 Cres
0A
1 10 100
VCE, C ollector-to-Em itter Voltage (V )
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
20
VCE = 400V
IC = 12A
16
12
8
4
0
0 10 20 30 40
Qg , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
A
50
0.5
VCC = 480V
VGE = 15V
T J = 25°C
IC = 12A
0.4
0.3
10
RG = 23 Ω
V GE = 15V
V CC = 480V
1
IC = 24A
IC = 12A
I C = 6 .0 A
0.2
0
10 20
A
30 40 50 60
R G , Gate Resistance (Ω)
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
0.1 A
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Ju n c tio n T e m p e ra tu re (°C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRG4BC30U.PDF ] | |
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