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IRG4BC30W-S fiches techniques PDF

International Rectifier - INSULATED GATE BIPOLAR TRANSISTOR

Numéro de référence IRG4BC30W-S
Description INSULATED GATE BIPOLAR TRANSISTOR
Fabricant International Rectifier 
Logo International Rectifier 





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IRG4BC30W-S fiche technique
PD - 91790
IRG4BC30W-S
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Designed expressly for Switch-Mode Power
Supply and PFC (power factor correction)
applications
• Industry-benchmark switching losses improve
efficiency of all power supply topologies
• 50% reduction of Eoff parameter
• Low IGBT conduction losses
• Latest-generation IGBT design and construction offers
tighter parameters distribution, exceptional reliability
Benefits
• Lower switching losses allow more cost-effective
operation than power MOSFETs up to 150 kHz
("hard switched" mode)
• Of particular benefit to single-ended converters and
boost PFC topologies 150W and higher
• Low conduction losses and minimal minority-carrier
recombination make these an excellent option for
resonant mode switching as well (up to >>300 kHz)
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy ƒ
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 2.10V
@VGE = 15V, IC = 12A
D 2Pak
Max.
600
23
12
92
92
± 20
180
100
42
-55 to + 150
300 (0.063 in. (1.6mm from case )
Units
V
A
V
mJ
W
°C
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient, ( PCB Mounted,steady-state)*
Typ.
–––
–––
Max.
1.2
40
* When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering
techniques refer to application note #AN-994.
www.irf.com
Units
°C/W
1
8/13/98

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