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IRG4PC40U fiches techniques PDF

IRF - INSULATED GATE BIPOLAR TRANSISTOR

Numéro de référence IRG4PC40U
Description INSULATED GATE BIPOLAR TRANSISTOR
Fabricant IRF 
Logo IRF 





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IRG4PC40U fiche technique
PD 91466E
INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC40U
UltraFast Speed IGBT
Features
• UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• Industry standard TO-247AC package
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 1.72V
@VGE = 15V, IC = 20A
Benefits
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθCS
RθJA
Wt
www.irf.com
Parameter
Junction-to-Case
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
TO-247AC
Max.
600
40
20
160
160
±20
15
160
65
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbfin (1.1Nm)
Units
V
A
V
mJ
W
°C
Min.
------
------
------
------
Typ.
------
0.24
------
6 (0.21)
Max.
0.77
------
40
------
Units
°C/W
g (oz)
1
12/30/00

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