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IRL530NS fiches techniques PDF

IRF - HEXFET Power MOSFET

Numéro de référence IRL530NS
Description HEXFET Power MOSFET
Fabricant IRF 
Logo IRF 





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IRL530NS fiche technique
l Advanced Process Technology
l Surface Mount (IRL530NS)
l Low-profile through-hole (IRL530NL)
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
G11
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRL530NL) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V…
Continuous Drain Current, VGS @ 10V…
Pulsed Drain Current …
PD @TA = 25°C Power Dissipation
PD @TC = 25°C Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚…
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ…
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
PD - 91349C
IRL530NS/L
HEXFET® Power MOSFET
D
VDSS =100V
RDS(on) = 0.10
S ID = 17A
D 2 Pak
T O -26 2
Max.
17
12
60
3.8
79
0.53
± 20
150
9.0
7.9
5.0
-55 to + 175
300 (1.6mm from case )
Typ.
–––
–––
Max.
1.9
40
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1/09/04

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