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PDF UTC8050S Data sheet ( Hoja de datos )
| Número de pieza | UTC8050S | |
| Descripción | NPN Epitaxial Silicon Transistor | |
| Fabricantes | Unisonic Technologies | |
| Logotipo |  |
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UTC 8050S NPN EPITAXIAL SILICON TRANSISTOR
LOW VOLTAGE HIGH CURRENT
SMALL SIGNAL NPN
TRANSISTOR
DESCRIPTION
The UTC8050S is a low voltage high current small signal
NPN transistor, designed for Class B push-pull audio
amplifier and general purpose applications.
1
FEATURES
*Collector current up to 700mA
*Collector-Emitter voltage up to 20 V
*Complementary to UTC 8550S
TO-92
1: EMITTER 2: COLLECTOR 3: BASE
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETER
SYMBOL
VALUE
Collector-Base Voltage
VCBO
30
Collector-Emitter Voltage
VCEO
20
Emitter-Base Voltage
VEBO
5
Collector Dissipation(Ta=25℃)
Pc
1
Collector Current
Ic 700
Junction Temperature
Tj 150
Storage Temperature
TSTG
-65 ~ +150
UNIT
V
V
V
W
mA
°C
°C
ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector-Base Breakdown Voltage
BVCBO
Ic=100µA,IE=0
30
Collector-Emitter Breakdown Voltage BVCEO
Ic=1mA,IB=0
20
Emitter-Base Breakdown Voltage
BVEBO
IE=100µA,Ic=0
5
Collector Cut-Off Current
ICBO
VCB=30V,IE=0
Emitter Cut-Off Current
IEBO
VEB=5V,Ic=0
DC Current Gain(note)
hFE1
VCE=1V,Ic=1mA
100
hFE2
VCE=1V,Ic=150 mA
120
hFE3
VCE=1V,Ic=500mA
40
Collector-Emitter Saturation Voltage VCE(sat)
Ic=500mA,IB=50mA
Base-Emitter Saturation Voltage
VBE(sat)
Ic=500mA,IB=50mA
Base-Emitter Saturation Voltage
VBE
VCE=1V,Ic=10mA
Current Gain Bandwidth Product
fT
VCE=10V,Ic=50mA
100
Output Capacitance
Cob VCB=10V,IE=0
f=1MHz
TYP
110
9.0
MAX
1
100
400
0.5
1.2
1.0
UNIT
V
V
V
uA
nA
V
V
V
MHz
pF
UTC
UNISONIC TECHNOLOGIES CO., LTD. 1
QW-R201-011,A
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet UTC8050S.PDF ] | |
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