PDF DS1225Y Data sheet ( Hoja de datos )

Número de pieza	DS1225Y
Descripción	64k Nonvolatile SRAM
Fabricantes	Dallas
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No Preview Available ! DS1225Y DS1225Y 64K Nonvolatile SRAM FEATURES • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss • Directly replaces 8K x 8 volatile static RAM or EE- PROM • Unlimited write cycles • Low-power CMOS • JEDEC standard 28–pin DIP package • Read and write access times as fast as 150 ns • Full ±10% operating range • Optional industrial temperature range of –40°C to +85°C, designated IND PIN ASSIGNMENT NC A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 VCC 27 WE 26 NC 25 A8 24 A9 23 A11 22 OE 21 A10 20 CE 19 DQ7 18 DQ6 17 DQ5 16 DQ4 15 DQ3 28–PIN ENCAPSULATED PACKAGE 720 MIL EXTENDED PIN DESCRIPTION A0–A12 – Address Inputs DQ0–DQ7 – Data In/Data Out CE – Chip Enable WE – Write Enable OE – Output Enable VCC GND – Power (+5V) – Ground NC – No Connect DESCRIPTION The DS1225Y 64K Nonvolatile SRAM is a 65,536–bit, fully static, nonvolatile RAM organized as 8192 words by 8 bits. Each NV SRAM has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of–tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is uncon- ditionally enabled to prevent data corruption. The NV SRAM can be used in place of existing 8K x 8 SRAMs directly conforming to the popular bytewide 28–pin DIP standard. The DS1225Y also matches the pinout of the 2764 EPROM or the 2864 EEPROM, allowing direct substitution while enhancing performance. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for micro- processor interfacing. 021998 1/8 1 page READ CYCLE SEE NOTE 1 WRITE CYCLE 1 SEE NOTE 2, 3, 4, 6, 7, 8 AND 12 WRITE CYCLE 2 SEE NOTE 2, 3, 4, 6, 7, 8 AND 13 DS1225Y ADDRESSES CE OE DOUT VIH VIL VIH tRC tACC tCO VIL VIH tOE VIL VIH VIL VIH VIH VIL tOH VIH tOD tCOE tCOE tOD VOH OUTPUT VOH VOL DATA VALID VOL ADDRESSES CE WE DOUT DIN VIH VIL tAW VIH tODW tWC VIH VIL VIH VIL VIL VIL tWP tWR1 VIL VIL HIGH VIH tOEW IMPEDANCE tDS tDH1 VIH DATA IN STABLE VIL VIH VIL ADDRESSES CE VVIHIL tAW VIH VIL WE DOUT tCOE DIN tWC tWP VIL VIL VIL VIL VIH VIL tWR2 VIH VIH VIH VIL tODW tDS tDH2 VIH VIH DATA IN STABLE VIL VIL 021998 5/8 5 Page

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