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SI Semiconductors - MJE Series Transistors

Numéro de référence HMJE13001L
Description MJE Series Transistors
Fabricant SI Semiconductors 
Logo SI Semiconductors 





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HMJE13001L fiche technique
Shenzhen SI Semiconductors Co., LTD.
MJE LOW VOLTAGE SERIES TRANSISTORS
Product Specification
MJE13001L
FEATURES HIGH VOLTAGE CAPABILITY
HIGH SPEED SWITCHING
WIDE SOA
APPLICATION: SUITABLE FOR 110V CIRCUIT MODE:
FLUORESCENT LAMP
ELECTRONIC BALLAST
Absolute Maximum Ratings
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter- Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Tc=25°C
SYMBOL
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
VALUE
400
200
9
0.6
7
150
-65-150
TO-92
UNIT
V
V
V
A
W
°C
°C
Electronic Characteristics Tc=25°C
CHARACTERISTICS
SYMBOL
Collector-Base Cutoff Current
ICBO
Collector-Emitter Cutoff Current
ICEO
Collector-Emitter Voltage
VCEO
Emitter -Base Voltage
VEBO
Collector-Emitter Saturation Voltage
Vces
Base-Emitter Saturation Voltage
Vbes
DC Current Gain
hFE
TEST CONDITION
VCB=400V
VCE=200V,IB=0
IC=10mA,IB=0
IE=1mA,IC=0
IC=50mA,IB=10mA
IC=0.1A,IB=0.02A
IC=0.3A,IB=0.1A
IC=50mA,IB=10mA
VCE=5V,IC=1mA
VCE=20V,IC=20mA
VCE=5V,IC=200mA
MIN
200
9
8
10
8
MAX
100
250
0.5
1.0
2.0
1.0
UNIT
A
A
V
V
V
V
40
Si semiconductors 2004.10
1

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