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Dallas - 3.3V 256k Nonvolatile SRAM

Numéro de référence DS1230W
Description 3.3V 256k Nonvolatile SRAM
Fabricant Dallas 
Logo Dallas 





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DS1230W fiche technique
www.dalsemi.com
DS1230W
3.3V 256k Nonvolatile SRAM
FEATURES
10 years minimum data retention in the
absence of external power
Data is automatically protected during power
loss
Replaces 32k x 8 volatile static RAM,
EEPROM or Flash memory
Unlimited write cycles
Low-power CMOS
Read and write access times as fast as 150 ns
Lithium energy source is electrically
disconnected to retain freshness until power is
applied for the first time
Optional industrial temperature range of
-40°C to +85°C, designated IND
JEDEC standard 28-pin DIP package
New PowerCap Module (PCM) package
- Directly surface-mountable module
- Replaceable snap-on PowerCap provides
lithium backup battery
- Standardized pinout for all nonvolatile
SRAM products
- Detachment feature on PowerCap allows
easy removal using a regular screwdriver
PIN ASSIGNMENT
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28 VCC
27 WE
26 A13
25 A8
24 A9
23 A11
22 OE
21 A10
20 CE
19 DQ7
18 DQ6
17 DQ5
16 DQ4
15 DQ3
28-Pin ENCAPSULATED PACKAGE
740-mil EXTENDED
NC
NC
NC
NC
VCC
WE
OE
CE
DQ7
DQ6
DQ5
DQ4
DQ3
DQ2
DQ1
DQ0
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
GND VBAT
15
16
17
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
34-Pin POWERCAP MODULE (PCM)
(USES DS9034PC POWERCAP)
NC
NC
A14
A13
A12
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
PIN DESCRIPTION
A0 - A14
- Address Inputs
DQ0 - DQ7
- Data In/Data Out
CE - Chip Enable
WE - Write Enable
OE - Output Enable
VCC
GND
- Power (+3.3V)
- Ground
NC - No Connect
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