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HITACHI - Twin Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier

Numéro de référence TBB1002
Description Twin Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
Fabricant HITACHI 
Logo HITACHI 





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TBB1002 fiche technique
TBB1002
Twin Build in Biasing Circuit MOS FET IC
VHF/UHF RF Amplifier
ADE-208-987F (Z)
7th. Edition
Dec. 2000
Features
Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.
Suitable for World Standard Tuner RF amplifier.
Very useful for total tuner cost reduction.
Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF,
Rs = 0 conditions.
Provide mini mold packages; CMPAK-6
Outline
CMPAK-6
Notes:
4
5
6
3
2
1
1. Gate-1(1)
2. Source
3. Drain(1)
4. Drain(2)
5. Gate-2
6. Gate-1(2)
1. Marking is “BM”.
2. TBB1002 is individual type number of HITACHI TWIN BBFET.

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