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PDF CFB1370 Data sheet ( Hoja de datos )
| Número de pieza | CFB1370 | |
| Descripción | PNP Silicon Epitaxial Power Transistor | |
| Fabricantes | Continental Device | |
| Logotipo |  |
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Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
PNP SILICON EPITAXIAL POWER TRANSISTOR
IS/ISO 9002
IS / IECQC 700000
Lic# QSC/L- 000019.2 IS / IECQC 750100
CFB1370
(9AW)
TO-220FP
Designed For AF Power Amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)
DESCRIPTION
SYMBOL
VALUE
Collector -Base Voltage
VCBO
60
Collector -Emitter Voltage
VCEO
60
Emitter- Base Voltage
VEBO
5.0
Collector Current
IC
3.0
Peak
ICP
6.0
Power Dissipation @ Ta=25 deg C
PC
2.0
Power Dissipation @ Tc=25 deg C
30
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55 to +150
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified)
DESCRIPTION
SYMBOL TEST CONDITION MIN TYP
Collector Emitter Voltage
VCEO IC=1mA, IB=0
60 -
Collector Base Voltage
VCBO IC=50uA, IE=0
60 -
Emitter Base Voltage
VEBO IE=50uA,IC=0
5.0 -
Collector Cut off Current
ICBO VCB=60V, IE=0
--
Emitter Cut off Current
IEBO VEB=4V,IC=0
--
Collector Emitter Saturation Voltage
VCE(Sat) IC=2A,IB=0.2A
--
Base Emitter Saturation Voltage
VBE(Sat) IC=2A, IB=0.2A
--
DC Current Gain
hFE IC=0.5A, VCE=5V 60
-
Dynamic Characteristics
Transition Frequency
ft VCE=5V,IC=0.5A, - 15
f=5MHz
Collector Output Capacitance
Cob VCB=10V, IE=0
- 80
f=1MHz
hFE CLASSIFICATION:-
D : 60 -120;
E : 100 -200
MARKING :
CFB
1370
D
CFB
1370
E
UNIT
V
V
V
A
A
W
W
deg C
deg C
MAX
-
-
-
10
10
1.5
1.5
320
UNIT
V
V
V
uA
uA
V
V
- MHz
- pF
F : 160 -320
CFB
1370
F
Continental Device India Limited
Data Sheet
Page 1 of 2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet CFB1370.PDF ] | |
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