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Numéro de référence | 11DQ06 | ||
Description | Schottky Rectifier ( Diode ) | ||
Fabricant | International Rectifier | ||
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1 Page
SCHOTTKY RECTIFIER
Bulletin PD-2.288 rev. E 03/03
11DQ05
11DQ06
1.1 Amp
Major Ratings and Characteristics
Characteristics
11DQ.. Units
IF(AV) Rectangular
waveform
VRRM
IFSM @ tp = 5 µs sine
VF @ 1 Apk, TJ = 125°C
1.1
50/60
150
0.53
A
V
A
V
TJ range
- 40 to 150 °C
Description/ Features
The 11DQ.. axial leaded Schottky rectifier has been optimized
for very low forward voltage drop, with moderate leakage.
Typical applications are in switching power supplies, convert-
ers, free-wheeling diodes, and reverse battery protection.
Low profile, axial leaded outline
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
Very low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
CASE STYLE AND DIMENSIONS
www.irf.com
Conform to JEDEC Outline DO-204AL (DO-41)
Dimensions in millimeters and inches
1
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Pages | Pages 5 | ||
Télécharger | [ 11DQ06 ] |
No | Description détaillée | Fabricant |
11DQ03 | SCHOTTKY BARRIER RECTIFIER DIODES | EIC |
11DQ03 | (11DQ03 / 11DQ04) SCHOTTKY RECTIFIER | International Rectifier |
11DQ03 | Diode Schottky 30V 1.1A 2-Pin DO-204AL Box | New Jersey Semiconductor |
11DQ03L | Low Forward Voltage drop Diode | Nihon Inter Electronics Corporation |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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