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DL-7140-201P fiches techniques PDF

Sanyo Semicon Device - INFRARED LASER DIODE

Numéro de référence DL-7140-201P
Description INFRARED LASER DIODE
Fabricant Sanyo Semicon Device 
Logo Sanyo Semicon Device 





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DL-7140-201P fiche technique
INFRARED LASER DIODE
DL-7140-201P
Ver.2 Jun. 2002
Features
• Wavelength : 783 nm (Typ.)
• Low threshold current : Ith = 40 mA (Typ.)
• High operating temperature : 200mW(Pulse)
• Small package : ø5.6mm
Package
0
ø5.6 - 0.025
ø4.4
ø3.55± 0.1
ø1.6
Tolerance : ± 0.2
(Unit : mm)
Effective window diameter 1.0min.
Applications
• Optical disc system (CD-R)
Usage condition
CW:<90mW Pulse:<200mW(peak power)
13
2
Top view
1.0± 0.1
LD facet
Absolute Maximum Ratings
(Tc=25°C)
Parameter
Symbol Ratings Unit
CW Po (CW)
Light Output Pulse1) Po(pulse)
90
200
Reverse Voltage (LD)
Operating
CW 2)
Temperature Pulse1) 2)
Storage Temperature
VR
Topr
Topr
Tstg
2
-10 to +60
-10 to +70
-40 to +85
1) Pulse Width 0.1µs, Duty 50%,Peak power
2) Case temperature
mW
V
°C
°C
Electrical and Optical Characteristics 3) 4) 5) 7)
ø1.4max.
3-
ø0.45± 0.1
Pin No. 1 2 3
ø2.0
Pin Connection
1 3 (NC)
LD
2 (Case)
(Tc=25°C)
Parameter
Threshold Current
Operating Current Tc=25°C
Lasing Wavelength
Beam 6) Perpendicular
Divergence Parallel
Symbol
Ith
Iop
Lp
Qv
Qh
Condition
CW
Po=70mW
Po=70mW
Po=70mW
Po=70mW
Min.
25
80
778
14
7.5
Typ.
40
110
783
16
8.5
Max.
60
140
788
18
9.0
Unit
mA
mA
nm
°
°
Off Axis
Angle
Perpendicular
Parallel
dQv
dQh
Po=70mW
Po=70mW
-
-
- ± 2.0 °
-
± 1.5
°
Differential Efficiency
dPo/dIop Po=70mW
0.8
1.1 1.3 mW/mA
Astigmatism
As Po=70mW -
-
5 µm
3) Initial values. 4) All the above values are evaluated with Tottori sanyo's measuring apparatus.
5) Reference values. 6)Full angle at half maximum. 7) Measured at CW .
Note : The above product specification are subject to change without notice.
Tottori SANYO Electric Co., Ltd. EIectronic Device Business Headquarters
LED Division
5-318, Tachikawa, Tottori 680-8634 Japan TEL : +81-857-21-2137 FAX : +81-857-21-2161

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