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PDF DIM400LSS17-A000 Data sheet ( Hoja de datos )
| Número de pieza | DIM400LSS17-A000 | |
| Descripción | Single Switch IGBT Module | |
| Fabricantes | Dynex | |
| Logotipo |  |
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DIM400LSS17-A000
DIM400LSS17-A000
Single Switch IGBT Module
Replaces issue February 2002, version DS5497-2.0
DS5497-3.0 March 2002
FEATURES
s 10µs Short Circuit Withstand
s Non Punch Through Silicon
s Isolated Copper Base
KEY PARAMETERS
VCES
1700V
VCE(sat) *
(typ)
2.7V
IC
(max)
400A
IC(PK)
(max)
800A
*(measured at the power busbars and not the auxiliary terminals)
APPLICATIONS
s Inverters
s Motor Controllers
s Induction Heating
The Powerline range of modules includes half bridge,
chopper, dual and single switch configurations covering voltages
from 600V to 3300V and currents up to 2400A.
The DIM400LSS17-A000 is a single switch 1700V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) plus full 10µs short circuit withstand.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
2(E)
5(E1)
3(G1)
1(C)
4(C1)
Fig. 1 Single switch circuit diagram
ORDERING INFORMATION
Order As:
DIM400LSS17-A000
Note: When ordering, please use the whole part number.
4
52
3
1
Outline type code: L
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
1/10
1 page  
ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise
Symbol
Parameter
td(off)
t
f
EOFF
td(on)
tr
E
ON
Qg
Qrr
Irr
EREC
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Gate charge
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Tcase = 125˚C unless stated otherwise
Symbol
Parameter
td(off)
tf
EOFF
t
d(on)
tr
E
ON
Qrr
Irr
EREC
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
DIM400LSS17-A000
Test Conditions
IC = 400A
VGE = ±15V
VCE = 900V
R
G(ON)
=
R
G(OFF)
=
4.7Ω
L ~ 100nH
I = 400A, V = 900V,
FR
dIF/dt = 3000A/µs
Min. Typ. Max. Units
- 1150 -
ns
- 100 - ns
- 120 - mJ
- 250 - ns
- 250 - ns
- 150 - mJ
- 4.5 - µC
- 100 - µC
- 230 -
A
- 70 - mJ
Test Conditions
IC = 400A
V
GE
=
±15V
VCE = 900V
RG(ON) = RG(OFF) = 4.7Ω
L ~ 100nH
IF = 400A, VR = 900V,
dI /dt
F
=
2500A/µs
Min. Typ. Max. Units
- 1400 -
ns
- 130 - ns
- 180 - mJ
- 400 - ns
- 250 - ns
- 170 - mJ
- 170 - µC
- 270 -
A
- 100 - mJ
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
5/10
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet DIM400LSS17-A000.PDF ] | |
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