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DG03-168 fiches techniques PDF

Mini-Circuits - MONOLITHIC AMPLIFIERS 50 BROADBAND DC to 8 GHz

Numéro de référence DG03-168
Description MONOLITHIC AMPLIFIERS 50 BROADBAND DC to 8 GHz
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DG03-168 fiche technique
MONOLITHIC AMPLIFIERS
BROADBAND DC to 8 GHz
50
ERA
ERA-SM
low power, up to +13.5 dBm output
all specifications at 25°C
J
FREQ.
GHz
GAIN , dB Typical
MODELu
NO.
ERA-1
ERA-2
ERA-3
ERA-1SM
ERA-21SM
ERA-2SM
fL - fU
DC-8
DC-6
DC-3
DC-8
DC-8
DC-6
over frequency, GHz
0.1 1 2 3 4 6
8
12.3 12.1 11.8 10.9 9.7 7.9 8.2
16.2 15.8 15.2 14.4 13.1 11.2 —
22.1 21.0 18.7 16.8 — — —
12.3 12.1 11.8 10.9 9.7 7.9 8.2
14.2 13.9 13.2 12.2 10.8 8.7 8.9
16.2 15.8 15.2 14.4 13.1 11.2 —
ERA-33SM
ERA-3SM
ERA-8SM
DC-3 19.3 18.7 17.4 15.9 — —
DC-3 22.1 21.0 18.7 16.8 — —
DC-2 31.5 25.0 19.0 15.0 12.0 —
Min.@
2 GHz
9
13
16
9
11.2
13
15
16
17
MAXIMUM DYNAMIC
VSWR
ABSO-
DC THERMAL CASE
POWER (dBm)
at 2 GHz*
Output
(1 dB
Comp.)
Input
(no
RANGE
at 2 GHz*
NF IP3
(:1)
Typ.
In Out
LUTE
MAX.
RATING3
OPERATING
POWER4
at Pin 3
Device
(dB)
(dBm)
DC-3
3-f **
U
DC-3 3-fU**
I
P Current
Volt.
RESIS-
TANCE
θjc
Typ.
STYLE
Typ. Min. dmg) Typ. Typ. GHz GHz GHz GHz (mA) (mW) (mA) Typ Min Max °C/W Note B
C
O
PRICE
N$
N
E
C
T
I
O
Qty.
N (30)
12.0 10.0 15 4.3 26 1.5 1.8 1.5 1.9 75 330 40 3.4 3.0 4.1 178
13.0 11.0 15 4.0 26 1.3 1.4 1.2 1.6 75 330 40 3.4 3.0 4.1 155
12.5 9.0 13 3.5 25 1.5 — 1.4 — 75 330 35 3.2 3.0 4.1 154
VV105 cb 1.37
VV105 cb 1.52
VV105 cb 1.67
12.0 10.0 15 4.3 26 1.5 1.8 1.5 1.9 75 330 40 3.4 3.0 4.1 183
12.6 10.6 15 4.7 26 1.1 1.4 1.3 1.9 75 330 40 3.5 3.0 4.1 194
13.0 11.0 15 4.0 26 1.3 1.4 1.2 1.6 75 330 40 3.4 3.0 4.1 160
WW107 cb 1.42
WW107 cb 1.57
WW107 cb 1.57
13.5 11.5 13 3.9 28.5 1.6 — 1.25 — 75 330 40 4.3 3.8 4.8 140
12.5 9.0 13 3.5 25 1.5 — 1.4 — 75 330 35 3.2 3.0 4.1 159
12.5 — 13 3.1 25 1.4 1.8 1.8 2.2 65 250 36 3.7 3.2 4.2 140
WW107 cb 1.72
WW107 cb 1.72
WW107 cb 1.22
see suggested PCB layout PL-075 for ERA models
features
l low thermal resistance
l miniature microwave amplifier
l frequency range, DC to 8 GHz, usable to 10 GHz
l up to 18.4 dBm typ. (16.5 dBm min) output power
absolute maximum ratings
operating temperature: -45°C to 85°C
storage temperature: -65° to 150°C
NOTES:
u Aqueous washable
* at 1 GHz for ERA-4,5,6, 4SM,4XSM ,5SM,5XSM, 50SM, 51SM, 6SM, 8SM.
** fu is the upper frequency limit for each model as shown in the table;
for ERA-8SM VSWR (In & Out) is specified at DC-1GHz & 1-4 GHz.
*** Gain and VSWR are specified at 1.5 GHz.
J Low frequency cutoff determined by external coupling capacitors.
A. Environmental specifications and re-flow soldering information available in
General Information Section.
B. Units are non-hermetic unless otherwise noted. For details on case
dimensions & finishes see “Case Styles & Outline Drawings”.
C. Prices and Specifications subject to change without notice.
D. For Quality Control Procedures see Table of Contents, Section 0,
"Mini-Circuits Guarantees Quality" article. For Environmental
Specifications see Amplifier Selection Guide.
1. Model number designated by alphanumeric code marking.
2. ERA-SM models available on tape and reel.
3. Permanent damage may occur if any of these limits are exceeded. These
ratings are not intended for continuous normal operation.
4. Supply voltage must be connected to pin 3 through a bias resistor in order
to prevent damage. See "Biasing MMIC Amplifiers" in minicircuits.com/
application.html. Reliability predictions are applicable at specified
current & normal operating conditions.
model identification
Model
marking (see note below)
ERA-1, ERA-1SM
ERA-2, ERA-2SM
ERA-21SM
ERA-3, ERA-3SM
ERA-33SM
ERA-4,-4SM
ERA-4XSM
ERA-5, ERA-5SM
ERA-50SM
ERA-51SM
ERA-5XSM
ERA-6, ERA-6SM
ERA-8SM
1
2
21
3
33
4
4X
5
50
51
5X
6
E8
Nlooctaet:ioPnre. fiSxulfefitxteler —t(toeprsti(o—onpatilo)—ndaels)iganreatfeosr
assembly
wafer
identification.
prefix letter
number
suffix letter
1,000,000
MTTF vs. Junction Temp.
(For all ERA Models except ERA-5, ERA-5SM)
100,000
10,000
1,000
100
10
1
80
100 120 140 160 180 200
Junction Temp. (˚C)
168
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