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PDF DFD05T Data sheet ( Hoja de datos )
| Número de pieza | DFD05T | |
| Descripción | 0.5A Power Rectifier | |
| Fabricantes | Sanyo Semicon Device | |
| Logotipo |  |
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Ordering number:EN2373
DFD05T
Diffused Junction Type Silicon Diode
0.5A Power Rectifier
Features
· High-speed switching use.
· Plastic molded structure.
· Reverse recovery time trr=0.15µs max (B, C, E, G).
trr=0.3µs max (J, L, N, R, T).
· Peak reverse voltage:VRM=100 to 1700V
· Average rectified current IO=0.5A
Package Dimensions
unit:mm
1174
[DFD05T]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
C:Cathode
A:Anode
Parameter
Peak Reverse Voltage
Average Recitified Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
Conditions
VRM
IO
IFSM
Tj
Ta=50˚C
50Hz sine wave, 1cycle
Tstg
DFD05TB
100
→
→
→
→
DFD05TC
200
→
→
→
→
DFD05TE DFD05TG
400 600
→ 0.5
→ 30
→ 150
→ –40 to +150
Unit
V
A
A
˚C
˚C
Parameter
Symbol
Conditions
Peak Reverse Voltage
Average Recitified Current
Surge Forward Current
Junction Temperature
Storage Temperature
VRM
IO
IFSM
Tj
Tstg
Ta=50˚C
50Hz sine wave,
1 cycle
Electrical Characteristics at Ta = 25˚C
DFD05TJ DFD05TL DFD05TN DFD05TR
800 1000 1200 1500
→→→→
→→→→
DFD05TT
1700
0.5
20
→ → → → 125
→ → → → –40 to +150
Unit
V
A
A
˚C
˚C
Parameter
Symbol
Conditions
Forward Voltage
Reverse Current
Reverse Recovery Time
VF
IR
trr
Reverse Recovery Time Test Circuit
IF=0.5A (B, C, E, G)
IF=0.5A (J, L, N, R, T)
VR:At each VRM
IF=2mA, VR=15V (B,C, E, G)
IF=2mA, VR=15V (J, L, N, R, T)
Ratings
min typ max
Unit
1.2 V
1.5 V
10 µA
0.15 µs
0.3 µs
Unit (resistance:Ω, capacitance:F)
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE, Tokyo Bldg., 1-10 , Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)1258AT, TS No.2373-1/2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet DFD05T.PDF ] | |
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