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Número de pieza | DFC15T | |
Descripción | 1.5A Power Rectifier | |
Fabricantes | Sanyo Semicon Device | |
Logotipo | ||
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No Preview Available ! Ordering number:EN2375
DFC15T
Diffused Junction Type Silicon Diode
1.5A Power Rectifier
Features
· High-speed switching use.
· Plastic molded structure.
· Reverse recovery time trr=0.15µs max (B, C, E, G).
trr=0.3µs max (J, L, N, R).
· Peak reverse voltage:VRM=100 to 1500V
· Average Rectified current IO=1.5A
Package Dimensions
unit:mm
1173
[DFC15T]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
C:Cathode
A:Anode
Parameter
Peak Reverse Voltage
Average Recitified Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
Conditions
VRM
IO
IFSM
Tj
Ta=35˚C
50Hz sine wave, 1cycle
Tstg
DFC15TB
100
→
→
→
→
DFC15TC
200
→
→
→
→
DFC15TE DFC15TG
400 600
→ 1.5
→ 80
→ 150
→ –40 to +150
Unit
V
A
A
˚C
˚C
Parameter
Peak Reverse Voltage
Average Recitified Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
Conditions
VRM
IO
IFSM
Tj
Ta=25˚C
50Hz sine wave, 1cycle
Tstg
DFC15TJ
800
→
→
→
→
DFC15TL
1000
→
→
→
→
DFC15TN DFC15TR
1200
1500
→ 1.5
→ 45
→ 125
→ –40 to +150
Unit
V
A
A
˚C
˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Forward Voltage
Reverse Current
Reverse Recovery Time
VF
IR
trr
Reverse Recovery Time Test Circuit
IF=1.5A (B, C, E, G)
IF=1.5A (J, L, N, R)
VR:At each VRM
IF=2mA, VR=15V (B,C, E, G)
IF=2mA, VR=15V (J, L, N, R)
Ratings
min typ max
Unit
1.2 V
1.5 V
–10 µA
0.15 µs
0.3 µs
Unit (resistance:Ω, capacitance:F)
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE, Tokyo Bldg., 1-10 , Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT) 5168TA, TS No.2375-1/2
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet DFC15T.PDF ] |
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