DataSheetWiki


BC307 fiches techniques PDF

Fairchild - PNP EPITAXIAL SILICON TRANSISTOR

Numéro de référence BC307
Description PNP EPITAXIAL SILICON TRANSISTOR
Fabricant Fairchild 
Logo Fairchild 





1 Page

No Preview Available !





BC307 fiche technique
BC307/308/309
Switching and Amplifier Applications
• Low Noise: BC309
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCES
Collector-Emitter Voltage
: BC307
: BC308/309
VCEO
Collector-Emitter Voltage
: BC307
: BC308/309
VEBO
IC
PC
TJ
TSTG
Emitter-Base Voltage
Collector Current (DC)
Collector Power Dissipation
Junction Temperature
Storage Temperature
1 TO-92
1. Collector 2. Base 3. Emitter
Value
-50
-30
-45
-25
-5
-100
500
150
-55 ~ 150
Units
V
V
V
V
V
mA
mW
°C
°C
©2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002

PagesPages 5
Télécharger [ BC307 ]


Fiche technique recommandé

No Description détaillée Fabricant
BC300 (BC300 - BC302) NPN EPITAXIAL PLANAR SILICON TRANSISTORS CDIL
CDIL
BC300 PNP SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES Micro Electronics
Micro Electronics
BC301 (BC300 - BC302) NPN EPITAXIAL PLANAR SILICON TRANSISTORS CDIL
CDIL
BC301 PNP SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES Micro Electronics
Micro Electronics

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche