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Numéro de référence | BC307 | ||
Description | PNP EPITAXIAL SILICON TRANSISTOR | ||
Fabricant | Fairchild | ||
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1 Page
BC307/308/309
Switching and Amplifier Applications
• Low Noise: BC309
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCES
Collector-Emitter Voltage
: BC307
: BC308/309
VCEO
Collector-Emitter Voltage
: BC307
: BC308/309
VEBO
IC
PC
TJ
TSTG
Emitter-Base Voltage
Collector Current (DC)
Collector Power Dissipation
Junction Temperature
Storage Temperature
1 TO-92
1. Collector 2. Base 3. Emitter
Value
-50
-30
-45
-25
-5
-100
500
150
-55 ~ 150
Units
V
V
V
V
V
mA
mW
°C
°C
©2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
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Pages | Pages 5 | ||
Télécharger | [ BC307 ] |
No | Description détaillée | Fabricant |
BC300 | (BC300 - BC302) NPN EPITAXIAL PLANAR SILICON TRANSISTORS | CDIL |
BC300 | PNP SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES | Micro Electronics |
BC301 | (BC300 - BC302) NPN EPITAXIAL PLANAR SILICON TRANSISTORS | CDIL |
BC301 | PNP SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES | Micro Electronics |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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