BC239 Datasheet PDF - Motorola Semiconductors
| Part Number | BC239 | |
| Description | Amplifier Transistors | |
| Manufacturers | Motorola Semiconductors | |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BC237/D
Amplifier Transistors
NPN Silicon
COLLECTOR
1
BC237,A,B,C
BC238B,C
BC239,C
2
BASE
3
EMITTER
MAXIMUM RATINGS
Rating
BC BC BC
Symbol 237 238 239
Unit
Collector – Emitter Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCES
VEBO
IC
PD
45 25 25
50 30 30
6.0 5.0 5.0
100
350
2.8
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.0 Watts
8.0 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient RqJA 357 °C/W
Thermal Resistance, Junction to Case
RqJC
125
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 2.0 mA, IB = 0)
BC237
BC238
BC239
V(BR)CEO
Emitter – Base Breakdown Voltage
(IE = 100 mA, IC = 0)
BC237
BC238
BC239
V(BR)EBO
Collector Cutoff Current
(VCE = 30 V, VBE = 0)
BC238
BC239
ICES
(VCE = 50 V, VBE = 0)
(VCE = 30 V, VBE = 0) TA = 125°C
BC237
BC238
BC239
(VCE = 50 V, VBE = 0) TA = 125°C
BC237
Min
45
25
25
6.0
5.0
5.0
—
—
—
—
—
—
1
2
3
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
Typ Max Unit
—— V
——
——
—— V
——
——
0.2 15 nA
0.2 15
0.2 15
0.2 4.0 µA
0.2 4.0
0.2 4.0
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1996
1
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for BC239 electronic component. |
| Information | Total 4 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ BC239.PDF Datasheet ] | |
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