DataSheetWiki


BC212B fiches techniques PDF

Motorola Semiconductors - Amlifier Transistors (PNP)

Numéro de référence BC212B
Description Amlifier Transistors (PNP)
Fabricant Motorola Semiconductors 
Logo Motorola Semiconductors 





1 Page

No Preview Available !





BC212B fiche technique
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BC212/D
Amplifier Transistors
PNP Silicon
COLLECTOR
3
2
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
BC BC BC
Symbol 212 213 214
Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
–50 –30 –30
–60 –45 –45
–5.0
–100
350
2.8
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.0 Watts
8.0 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient RqJA 357 °C/W
Thermal Resistance, Junction to Case
RqJC
125
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Collector – Emitter Breakdown Voltage
(IC = –2.0 mAdc, IB = 0)
BC212
BC213
BC214
V(BR)CEO
Collector – Base Breakdown Voltage
(IC = –10 mA, IE = 0)
BC212
BC213
BC214
V(BR)CBO
Emitter – Base Breakdown Voltage
(IE = –10 mAdc, IC = 0)
BC212
BC213
BC214
V(BR)EBO
Collector–Emitter Leakage Current
(VCB = –30 V)
BC212
BC213
BC214
ICBO
Emitter–Base Leakage Current
(VEB = –4.0 V, IC = 0)
BC212
BC213
BC214
IEBO
Min
–50
–30
–30
–60
–45
–45
–5
–5
–5
BC212,B
BC213
BC214
1
2
3
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
Typ Max Unit
— — Vdc
——
——
— — Vdc
——
——
— — Vdc
——
——
— –15 nAdc
— –15
— –15
— –15 nAdc
— –15
— –15
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1996
1

PagesPages 4
Télécharger [ BC212B ]


Fiche technique recommandé

No Description détaillée Fabricant
BC212 Amlifier Transistors (PNP) Motorola Semiconductors
Motorola Semiconductors
BC212 Amplifier Transistors(PNP Silicon) ON
ON
BC212 Process 63 PNP Medium Power Fairchild
Fairchild
BC212 COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTOR Micro Electronics
Micro Electronics

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche